2017
DOI: 10.1088/1361-6463/aa6fbd
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Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

Abstract: An experimental and theoretical analysis of the temperature profile in semiconductor laser diodes using the photodeflection technique

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Cited by 12 publications
(9 citation statements)
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References 59 publications
(98 reference statements)
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“…That would correspond to a shift of the bulk curve towards higher stresses. For the type of structures here considered, we estimated that the onset for plastic deformation approximately corresponds to a peak temperature of 600K [6,7]. For a SQW laser, that temperature is reached for absorbed laser powers of about 8 MW/cm 2 , according to Figure 5.…”
Section: Thermal Stressesmentioning
confidence: 87%
See 1 more Smart Citation
“…That would correspond to a shift of the bulk curve towards higher stresses. For the type of structures here considered, we estimated that the onset for plastic deformation approximately corresponds to a peak temperature of 600K [6,7]. For a SQW laser, that temperature is reached for absorbed laser powers of about 8 MW/cm 2 , according to Figure 5.…”
Section: Thermal Stressesmentioning
confidence: 87%
“…In previous papers [6,7] we have modelled the catastrophic degradation of a SQW laser diode by means of a thermomechanical model in which the local heating is responsible for laser self-absorption and subsequent mechanical failure. This process leads to large temperature gradients that give rise to relevant thermal stresses.…”
Section: Introductionmentioning
confidence: 99%
“…Finally, while consistent data concerning the thermal conductivity of the laser structure are available, more effort is necessary to understand the mechanical behaviour of the QWs, in order to ascertain their resistance to plastic deformation and how they behave when they are exposed to an internal source of stress. The symbols correspond to the data for κbulk/κeff = 0.34 and for power densities from 2 to 14 MW cm −2 with a 2 MW cm −2 step size, evaluated either in the QW (circles) or at the QW-guide interfaces (triangles) [124]. Figure 13.…”
Section: Discussionmentioning
confidence: 99%
“…The fact that the model was adequate for a DH device with a 200 nm thick GaAs active layer, but not for the 12 nm thick QW, was an indication that our approach was not fully correct. As the size-dependent thermal conductivity effects had already been considered, the enhancement of the mechanical strength and the corresponding displacement of the onset of plasticity for the thinnest layers were brought into the scheme [124]. In want for more detailed experimental studies, the available yield strength data for low dimensional structures [104,107] were extrapolated in order to simulate the mechanical behaviour of the guide layers and the QW.…”
Section: The Incidence Of Nanoscale Effects On Codmentioning
confidence: 99%
“…Finally, the evolution of the laser structure, associated with the formation of defects, during the laser operation produces changes in the materials and therefore their properties evolve as well; in particular, the thermal conductivity decreases with the presence of defects [9], and one can claim it as the factor producing the thermal runaway associated with the COD [10]. All these aspects are studied herein on the bases of a thermomechanical model for the COD of high power laser diodes based on GaAs related compounds [6,10]. Also, one discuss about the role of the QW and the guide layers in the end of life of the laser.…”
Section: Introductionmentioning
confidence: 99%