Nanoscale domains in strained epitaxial BiFeO3 thin Films on LaSrAlO4 substrate

Chen, Zuhuang; You, Lü; Huang, Chuanwei; Qi, Yajun; Wang, Junling; Sritharan, Thirumany; Chen, Lang

doi:10.1063/1.3456729

Cited by 78 publications

(85 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As predicted from the crystallographic information, the ferroelectric domain structure does rotate by 45 ° in the stripe pattern. Th e phase at lower temperature has dense stripe domains with a typical domain width of ~ 50 nm along 〈 110 〉 c direction, which is consistent with the PFM images reported by Chen et al 23,25 ; whereas the higher temperature phase has much larger stripe domains, which are elongated along 〈 100 〉 c . Th is suggests that the domain walls at the higher temperature have a higher energy cost to be stabilized.…”

Section: Resultssupporting

confidence: 80%

Concurrent transition of ferroelectric and magnetic ordering near room temperature

Jung

et al. 2011

Nat Commun

147

View full text Add to dashboard Cite

Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic N é el temperature of the multiferroic compound BiFeO 3 is suppressed to around room temperature by heteroepitaxial misfi t strain. Remarkably, the ferroelectric state undergoes a fi rst-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our fi ndings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

show abstract

Section: Resultssupporting

confidence: 80%

Concurrent transition of ferroelectric and magnetic ordering near room temperature

Jung

et al. 2011

Nat Commun

147

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

“…Coexisting crystallographic phases have been observed in several inorganic perovskite materials of mixed [35][36][37] and pure [38][39][40] composition. For the latter case, it has been shown that the secondary phase can be stabilized through the effect of strain imposed on a thin film by the substrate 38,39 or through external pressure. 40 Despite the fact that CH 3 NH 3 PbI 3−x Cl x -films studied here were grown on an amorphous glass substrate, and hence any lattice-mismatch of the as-grown sample is ruled out, unequal thermal expansion and, more importantly, the spontaneous change of the in-plane lattice constants during the phase-transition 26 may well cause a significant amount of strain to the film.…”

mentioning

confidence: 99%

Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

et al. 2014

View full text Add to dashboard Cite

The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

show abstract

“…There values are close to the reported T and R structure parameters. 22,23 In order to further confirm the crystallographic orientation relationship between BFO and MgO substrate, pole figures were also recorded. As expected, Fig.1 The BFO/TiN/MgO structures were also examined by the cross-sectional STEM observations and the images are shown in Fig.2.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

Wang

et al. 2017

AIP Advances

View full text Add to dashboard Cite

BiFeO3/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.

show abstract

Nanoscale domains in strained epitaxial BiFeO3 thin Films on LaSrAlO4 substrate

Cited by 78 publications

References 24 publications

Concurrent transition of ferroelectric and magnetic ordering near room temperature

Concurrent transition of ferroelectric and magnetic ordering near room temperature

Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

Contact Info

Product

Resources

About