Nanoscale Device Modeling and Circuit-Level Performance Projection of Top-Gated Graphene Nanoribbon Field-Effect Transistor for Digital Logic Gates

Tan, Michael Loong Peng; Chin, Huei Chaeng; Lim, Li Len; Wong, Weng Soon; Su, Eileen Lee Ming; Yeong, Che Fai

doi:10.1166/sam.2014.1778

Cited by 19 publications

(3 citation statements)

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“…A semiconductor device can control the output loop current by controlling the electric eld effect of the input loop, FET. [166][167][168][169][170][171][172][173][174][175][176][177][178][179][180][181][182][183][184] In 2013, researchers proved that by introducing edge defects, to achieve a higher pH response of graphene FET, edge defects can be introduced. The decrease in GNR width increases the pH response.…”

Section: The Eld-effect Transistor (Fet)mentioning

confidence: 99%

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Zou

Wang

2021

RSC Adv.

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Section: The Eld-effect Transistor (Fet)mentioning

confidence: 99%

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Zou

Wang

2021

RSC Adv.

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“…In semiconductor technology, arithmetic operations are typically performed by several combinations of logic gates [68,69]. Several molecular functional systems have been recently reported [70][71][72].…”

Section: Repeatability and Edta Disodium Salt Titration Of R6g-cb Formentioning

confidence: 99%

Dual sensing performance of a rhodamine-derived scaffold for the determination of Cu2+ and Ce4+ in aqueous media

Jeong

Rao

Son

2015

Sensors and Actuators B: Chemical

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“…Nevertheless, the downscaling trend is facing obstacles as we enter into the nanometer region due to short channel effects (SCE) [1]. The discovery of the carbon nanotube (CNT) by Iijima [2] in 1991 has opened the opportunity to prolong the life of Moore's Law in the "More than Moore" domain.…”

Section: Introductionmentioning

confidence: 99%

Non-ballistic Modeling Transport of Phonon Scattering in Carbon Nanotube and Silicon Nanowire Field-Effect Transistors

Chin

Tan

2015

2015 17th UKSim-AMSS International Conference on Modelling and Simulation (UKSim)

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The effects of acoustic and optical phonon scattering on the electrical transport characteristic of carbon nanotube (CNT) and silicon nanowire (Si NW) field-effect transistors (FETs) are examined using the top of the barrier model. The phonon scattering effects are incorporated into the device model via the transmission coefficients into the ballistic Landeur Buttiker formalism. It is revealed that the effective mean free path (MFP) denoted by Leff is dominated by the acoustic phonon MFP at low energy. Nevertheless, Leff is limited by the optical phonon MFP at higher temperatures. At a low VG, the current reduction is due to the electron-acoustic phonon interaction and at a high VG, the current is limited by the optical phonon. The ballisticity of the device in which the ratio of scattering current to the ballistic current for various channel lengths, L, at different gate bias are also studied. It is shown that the transistor with a shorter channel length operates as a ballistic device as the length approaches the phonon MFP. In addition, the drain-induced barrier lowering (DIBL), subthreshold swing (SS) and on-off ratio of the devices are computed. Finally, the voltage transfer characteristic (VTC) is also explored to observe the functionality of the models as potential logic gates. Keywords -acoustic; optical; mean free path (MFP); carbon nanotube (CNT); silicon nanowire (Si NW); ballisticityI.

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Nanoscale Device Modeling and Circuit-Level Performance Projection of Top-Gated Graphene Nanoribbon Field-Effect Transistor for Digital Logic Gates

Cited by 19 publications

References 0 publications

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Dual sensing performance of a rhodamine-derived scaffold for the determination of Cu2+ and Ce4+ in aqueous media

Non-ballistic Modeling Transport of Phonon Scattering in Carbon Nanotube and Silicon Nanowire Field-Effect Transistors

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