Nanoscale ballistic diodes made of polar materials for amplification and generation of radiation in the 10 THz-range

Kochelap, V. A.; Korotyeyev, V. V.; Lyashchuk, Yu. M.

doi:10.1063/1.5117220

Cited by 3 publications

(1 citation statement)

References 57 publications

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“…More recently, exploiting the T (E) ≈ 1 property has more been used to build a ballistic rectifier fabricated in single-layer graphene sandwiched by boron nitride flakes, exhibiting a mobility of ∼ 2 × 10 5 cm 2 /V•s and a voltage responsivity of 2.3×10 4 V/W with these properties holding to room temperature [78]. The T (E) ≈ 1 property also has allowed ballistic diodes operating in the THz range [79], due to the way electrons with T (E) ≈ 1 and large v(E) (as in Sec. V) interact with electromagnetic radiation.…”

Section: E Nearly Quantum Dragon Nanodevice Circuitsmentioning

confidence: 99%

Order amidst disorder in semi-regular, tatty, and atypical random nanodevices with locally correlated disorder

Novotny,

Novotný

2020

Preprint

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We make unexpected predictions for the electrical conductance and local density of states (LDOS) of a wide class of semi-regular nanodevices, tatty nanodevices, and nanodevices with atypical but arbitrarily strong disorder. Disorder is disruptive to electron transport, as it causes coherent electron scattering. Nevertheless, we predict a wide class of nanodevices which show order amidst disorder, in that the device Hamiltonians are disordered but when the device is attached to proper leads the LDOS is ordered. These nanodevices also are quantum dragons, as they have complete electron transmission, T (E) = 1 for all electron energies which propagate in the attached leads. We analyze a conventional single-band tight-binding model by NEGF (Non-Equilibrium Green's Function) methods. We provide a recipe to allow extensive disorder in coherent transport through quantum nanodevices based on semi-regular, random, or tatty 2D, 3D, and 2D+3D underlying graphs with arbitrarily strong disorder in the tight-binding parameters, while the nanodevice keeps the desired quantum properties. The tight-binding parameters must be locally correlated to achieve order amidst disorder and T (E) = 1. Consequently, in addition to the known regular examples of armchair single-walled carbon nanotubes and zigzag graphene nanoribbons, we predict a large class of metallic allotropes of carbon with T (E) = 1. We also provide in two different regimes universal scaling analysis for the average transmission, Tave(E), for nanodevices which have nearly the desired quantum properties.

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Section: E Nearly Quantum Dragon Nanodevice Circuitsmentioning

confidence: 99%

Order amidst disorder in semi-regular, tatty, and atypical random nanodevices with locally correlated disorder

Novotny,

Novotný

2020

Preprint

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Valley-dependent quasi-ballistic electron transport in FETs based on multi-valley semiconductors

Yelisieiev,

Kochelap

2024

AIP Advances

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We study quasi-ballistic transport in field effect transistors (FETs) with the conductive channels containing several groups of the carriers. These groups are considered independent in the sense of the absence of inter-group exchange, but their dynamics is strongly coupled through collective electrostatic potential. In particular, for FETs based on multi-valley semiconductors, we show that the quasi-ballistic transport is significantly valley-dependent and the currents induce valley polarization with peculiar spatial distributions of the carriers for every valley. In turn, the valley polarization affects the currents and voltage distributions in the FET channels. The importance of the valley-dependent effects is illustrated for different examples of Si-based FETs and AlAs-FETs. We suggest that the disclosed valley polarization by the current in FETs can be also used in the emerging discipline of valleytronics.

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Plasma wave oscillations in a nonequilibrium two-dimensional electron gas: Electric field induced plasmon instability in the terahertz frequency range

Korotyeyev

Kochelap

2020

Phys. Rev. B

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Nanoscale ballistic diodes made of polar materials for amplification and generation of radiation in the 10 THz-range

Cited by 3 publications

References 57 publications

Order amidst disorder in semi-regular, tatty, and atypical random nanodevices with locally correlated disorder

Order amidst disorder in semi-regular, tatty, and atypical random nanodevices with locally correlated disorder

Valley-dependent quasi-ballistic electron transport in FETs based on multi-valley semiconductors

Plasma wave oscillations in a nonequilibrium two-dimensional electron gas: Electric field induced plasmon instability in the terahertz frequency range

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