Nanoribbon Waveguides for Subwavelength Photonics Integration

Law, Matt; Sirbuly, Donald J.; Johnson, Justin C.; Goldberger, Joshua E.; Saykally, Richard J.; Yang, Peidong

doi:10.1126/science.1100999

Cited by 892 publications

(581 citation statements)

References 25 publications

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“…Especially, quasi-one-dimensional ZnO nanostructures (e.g. nanorods, nanowires, nanotubes and nanobelts) have been considered highly potential for sensor application such as gas sensor [1][2] and biosensor [3][4][5], and nanophotonic applications such as nanolasers [6][7][8], optical waveguides [9][10][11], and light emitting diodes [12]. However, one of the significant differences between nanostructures and an epilayer is the larger surface-to-volume ratio of the former.…”

Section: Introductionmentioning

confidence: 99%

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

Yang

Zhao

Willander

et al. 2010

Applied Surface Science

108

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The surface composition of as-grown and annealed ZnO nanorods arrays (ZNAs) grown by a two-steps chemical bath deposition method has been investigated by Xray photoelectron spectroscopy (XPS). XPS confirms the presence of OH bonds and specific chemisorbed oxygen on the surface of ZNAs, as well as H bonds on 0) 1 (10 surfaces which has been first time observed in the XPS spectra. The experimental results indicated that the OH and H bonds play the dominant role in facilitating surface recombination but specific chemisorbed oxygen also likely affect the surface recombination. Annealing can largely remove the OH and H bonds and transform the composition of the other chemisorbed oxygen at the surface to more closely resemble that of high temperature grown ZNAs, all of which suppresses surface recombination according to time-resolved photoluminescence measurements.

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Section: Introductionmentioning

confidence: 99%

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

Yang

Zhao

Willander

et al. 2010

Applied Surface Science

108

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“…[6][7][8] Among nanomaterials, a nanowire has the additional advantage of propagating these photon-exciton pairs due to better optical and carrier confinement. 9,10 However, the possibility of generating exciton-photon pairs by two-photon absorption process is not yet reported in ZnO nanowire. The goal of our research is to investigate the prospect to generate polariton modes that has huge importance for quantum optics and optical information transfer in photonic circuits.…”

mentioning

confidence: 99%

Resonance enhancement of optical second harmonic generation in a ZnO nanowire

Prasanth

Vugt

Vanmaekelbergh

et al. 2006

Applied Physics Letters

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Two-photon absorption measurement has been carried out in a single 80 nmϫ 10 m ZnO nanowire using femtosecond laser pulses in the wavelength range of 700-800 nm. In addition to the deep-level green emission around 530 nm due to surface defects and the near band-edge ultraviolet emission around 360 nm due to the exciton, a second harmonic peak has been observed. The strength of the frequency-doubled component is found to enhance while the two-photon absorption wavelength is tuned towards the exciton wavelength of the nanowire. This behavior can be ascribed to the resonant exciton absorption in ZnO nanowires. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2200230͔Semiconductor nanocrystals have attracted much interest due to their fundamental importance in bridging the gap between bulk matter and molecular species. Zinc oxide is a remarkable II-VI semiconductor with potential applications owing to its diverse properties. 1 The combination of high excitonic and biexcitonic oscillator strength and good high temperature characteristics make ZnO a promising material for optical applications. 2 It has been used as a visible and ultraviolet photoconductor and as fluorescent material, apart from its usefulness in optical waveguides, acousto-optic devices, thin film transistors, etc. 3,4 Its wide band gap of 3.37 eV at room temperature makes ZnO suitable for shortwavelength optoelectronic devices, including light-emitting diodes ͑LEDs͒ and laser diodes ͑LDs͒. ZnO has a high exciton binding energy of 60 meV, which renders it more applicable for making room-temperature UV laser devices. 5 Small-diameter ZnO nanowires are expected to further lower the lasing threshold because quantum effects result in enhancement of density of states near the band edges and radiative recombination due to carrier confinement. The high exciton binding energy of ZnO at room temperature makes it a promising material for polariton lasers. 6-8 Among nanomaterials, a nanowire has the additional advantage of propagating these photon-exciton pairs due to better optical and carrier confinement. 9,10 However, the possibility of generating exciton-photon pairs by two-photon absorption process is not yet reported in ZnO nanowire. The goal of our research is to investigate the prospect to generate polariton modes that has huge importance for quantum optics and optical information transfer in photonic circuits. High optical nonlinearity due to the unequal atomic size of Zn and O is reported by Levine. 11 The acentrically located bond charge contributes a homopolar energy gap. Since nonlinear susceptibility is more sensitive to the crystal potentials, ZnO is found to be highly nonlinear. This high optical nonlinearity produces second harmonic photon, while the two-photon absorption creates excitons in ZnO nanowire. By tuning the second harmonic photon energy towards the exciton resonance, an enhancement in second harmonic generation ͑SHG͒ is revealed in the present investigation.The II-VI semiconductors are efficient second harmonic generators sin...

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“…In particular, though a wide range of optical operations have been achieved with nanowires, most experiments required optical control [15][16][17] . Meanwhile, PIC applications will likely necessitate electrically controllable optoelectronic devices.…”

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confidence: 99%

Nanophotonic integrated circuits from nanoresonators grown on silicon

Chen

et al. 2014

Nat Commun

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Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

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Nanoribbon Waveguides for Subwavelength Photonics Integration

Cited by 892 publications

References 25 publications

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

Resonance enhancement of optical second harmonic generation in a ZnO nanowire

Nanophotonic integrated circuits from nanoresonators grown on silicon

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