Abstract:Reliability tests, such as High-Temperature Operating Life (HTOL), Hot Carrier Injection (HCI), Time Dependent Dielectric Breakdown (TDDB), etc., is required for the lifetime prediction of an integrated circuit (IC) product. Transmission Electron Microscopy (TEM) analysis is required to provide insights to the defect mechanisms, induced in the scaled gate oxide, by the above reliability tests. In this paper, application of high resolution Nano-probing Electron Beam Absorbance Current (EBAC) to isolate the defe… Show more
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