2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) 2016
DOI: 10.1109/itherm.2016.7517693
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Nanoporous membrane production via block copolymer lithography for high heat dissipation systems

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Cited by 7 publications
(6 citation statements)
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“…Gate voltage scaling at these dimensions necessitates state-of-the-art architectures beyond FinFETs such as gate-all-around FET technology, leading to further integration complexity 4 . Approaches complimenting photolithography include nanoimprint lithography 5,6 , block copolymer lithography [7][8][9][10][11][12][13][14] and, recently, area selective deposition (ASD) [15][16][17] . Such methods are favorable in enabling future device integration and help alleviate fabrication demands, e.g.…”
Section: Introductionmentioning
confidence: 99%
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“…Gate voltage scaling at these dimensions necessitates state-of-the-art architectures beyond FinFETs such as gate-all-around FET technology, leading to further integration complexity 4 . Approaches complimenting photolithography include nanoimprint lithography 5,6 , block copolymer lithography [7][8][9][10][11][12][13][14] and, recently, area selective deposition (ASD) [15][16][17] . Such methods are favorable in enabling future device integration and help alleviate fabrication demands, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…Continued miniaturization of semiconductor devices has led to cost and integration issues which challenge the manufacture of a 3 nm node as envisaged by semiconductor foundries for 2023. , Gate voltage scaling at these dimensions necessitates state-of-the-art architectures beyond fin field-effect transistors (FETs) such as the gate-all-around FET technology, leading to further integration complexity . Approaches complimenting photolithography include nanoimprint lithography, , block copolymer lithography, and, recently, area-selective deposition (ASD). Such methods are favorable in enabling future device integration and help alleviate fabrication demands, for example, litho-etch–litho-etch.…”
Section: Introductionmentioning
confidence: 99%
“…For logic and memory integration, applications can range from the low-κ films that sustain electrical isolation between interconnects through to the high-κ gate oxide. Usage has even been extended to high-contrast oxide etch masks during device fabrication. , …”
Section: Introductionmentioning
confidence: 99%
“…Usage has even been extended to high-contrast oxide etch masks during device fabrication. 14,15 Diverse methods have been studied hitherto in the ASD field encompassing the use of self-assembled monolayers and unreactive polymer layers. These have been combined with atomic layer deposition (ALD) in order to deposit precise metal or dielectric layers.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Applications include, but are not restricted to, hard-disk drive and magnetic storage devices [ 126 , 132 , 133 , 134 , 135 ], nanophotonics and plasmonics materials [ 136 , 137 , 138 ], or chemical sensors [ 139 ]. Most often, BCPs are still used as templates for patterning, as in the case of graphene structuring [ 140 , 141 , 142 , 143 ], the fabrication of nanoporous membranes [ 144 , 145 , 146 , 147 , 148 ] or energy storage, photovoltaics and batteries [ 149 , 150 , 151 , 152 ]. In other applications, however, BCPs can present a more active role and can be used as stabilizing agent, for surface functionalization [ 153 , 154 , 155 , 156 ] or to aid in nanoparticle self-assembly [ 157 ].…”
Section: Block Copolymers For the Fabrication Of Functional Devicementioning
confidence: 99%