Nanopore/pillar formation induced by ion irradiation with a controlled projected range via Au deposition on Ge

Abstract

Nanopore/pillar formation on a Ge substrate can be induced by ion irradiation, which activates the ion beam sputtering and self-organization of point defects. Considering that the size and morphology of nanostructures are dependent on damage production, the irradiation parameters significantly affect nanostructuring. Here, the projected range of incident ions was selected as a parameter to be investigated. The projected range was modified by adding an Au buffer layer on the surface of the substrate, enabling the ions to stop in a shallower layer. The experimental results showed that the deposited Au layer affected the size and morphology of the nanostructures produced by ion irradiation. As a unique morphology, network-like structures were observed on the Au-deposited substrates. These structures were larger than ordinary porous structures.