2015
DOI: 10.1021/nl504414g
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Nanoplatelets Bridging a Nanotrench: A New Architecture for Photodetectors with Increased Sensitivity

Abstract: Interparticle charge hopping severely limits the integration of colloidal nanocrystals films for optoelectronic device applications. We propose here to overcome this problem by using high aspect ratio interconnects made of wide electrodes separated by a few tens of namometers, a distance matching the size of a single nanoplatelet. The semiconducting CdSe/CdS nanoplatelet coupling with such electrodes allows an efficient electron-hole pair dissociation despite the large binding energy of the exciton, resulting … Show more

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Cited by 64 publications
(77 citation statements)
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References 30 publications
(53 reference statements)
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“…This value is closer to 0.5 expected for bimolecular recombination (electron-hole recombination through radiative and non-radiative paths) than to the value of 1 that results from a monomolecular process (trapping) usually observed for metal chalcogenide nanocrystals. 30 This supports the hypothesis of the lower role of surface trapping in PNCs, as expected for a defect-tolerant material in which trap states are away from the band gap. We also investigated the temperature dependence of the current (see Figure 2(c)).…”
supporting
confidence: 82%
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“…This value is closer to 0.5 expected for bimolecular recombination (electron-hole recombination through radiative and non-radiative paths) than to the value of 1 that results from a monomolecular process (trapping) usually observed for metal chalcogenide nanocrystals. 30 This supports the hypothesis of the lower role of surface trapping in PNCs, as expected for a defect-tolerant material in which trap states are away from the band gap. We also investigated the temperature dependence of the current (see Figure 2(c)).…”
supporting
confidence: 82%
“…Along this nanotrench, the two electrodes lie 60 nm apart and have a high aspect ratio (length of 15 µm). Moreover, they present the key advantage of being built with a high fabrication success ratio (>80%) using only two optical lithography steps 30,35 in spite of the sub-wavelength size of the trench. To follow the electric field dependence of the conductance over almost four orders of magnitude, we used µm spaced interdigitated electrodes for the low field range and nanotrench electrodes for the high field range.…”
Section: Figure 2 (A) IV Curves Of a Film Of Cspb(br065i035)3 Pncmentioning
confidence: 99%
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“…8,9 The need to control the shape of the NPs is therefore strong and the growing interest in shape-controlled syntheses of NCs is confirmed by numerous contributions for different applications such as optics (photodetectors, 10,11 lasers, 12 fluorescence [13][14][15] ), electronics, [16][17][18] catalysis, 19 biological sensing 20 and imaging. 21,22 The top-down (chemical or mechanical exfoliation [23][24][25][26] by ion intercalation, ion exchange, sonication 27 or by the "Scotchtape" method 28 ) as well as the bottom-up approaches have so far been explored to synthesize 2D nanostructures with different techniques used such as physical deposition methods (vapor deposition 29 , molecular beam epitaxy (MBE) 30 ), lithography, 31,32 or wet chemical methods.…”
Section: Introductionmentioning
confidence: 99%
“…3a. In such nanotrench devices, the photoresponse is dramatically boosted [20] compared to the same material operated in the hopping regime, and responsivity as large as 1 kAW -1 has been demonstrated. This value is the record value obtained for CdSe nanomaterial based devices.…”
Section: From Photoconductor To Phototransistormentioning
confidence: 99%