“…The far field optical lithography, both in projection and scanning, has a first principle limitation in size reduction, the diffraction limit, as light cannot be focused below a size of about half the wavelength used. The main approach to circumvent this problem is to reduce the light wavelength and this is the roadmap traced by the semiconductor industry [13], now using less than 100nm sources mostly from synchrotron radiation but also from other new developments such as short wavelength lasers [13,14]. Another approach is to avoid the far field limit by near field approaches [15], but these techniques suffer from the same drawbacks of other sophisticated scanning methods, slow throughput and small scanning areas, unless very sophisticated tricks are developed [16].…”