2021
DOI: 10.1002/ange.202015138
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Nanopartikel auf subnanometer dünnen oxidischen Filmen: Skalierung von Modellsystemen

Abstract: Durch die Abscheidung von ultradünnen Oxidschichten auf atomar‐flachen Metalloberflächen konnte die elektronische Struktur des Metalls und hierdurch dessen katalytische Aktivität beeinflusst werden. Die Skalierung dieser Architekturen für eine technische Nutzbarkeit war bisher aber kaum möglich. Durch die Verwendung einer flüssigkristallinen Phase aus Fluorhectorit‐Nanoschichten, können wir solche Architekturen in skalierbarem Maßstab imitieren. Synthetischer Natriumfluorhectorit (NaHec) quillt spontan und rep… Show more

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Cited by 2 publications
(3 citation statements)
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References 67 publications
(61 reference statements)
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“…Furthermore, the nanosheets even accept additional negative charge beyond what is expected for charge balancing of pristine NaHec as evidenced by electron energy loss spectroscopy (EELS) of Si. [22] Similar to what was reported for HKUST-1 embedded Pd nanoparticles, we find that the additional holes created by the described charge transfer for intercalated nanoparticulate Pd indeed also enhances the maximum H 2 storage capacity compared to identical nanoparticles covered with PVP.…”
Section: Introductionsupporting
confidence: 87%
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“…Furthermore, the nanosheets even accept additional negative charge beyond what is expected for charge balancing of pristine NaHec as evidenced by electron energy loss spectroscopy (EELS) of Si. [22] Similar to what was reported for HKUST-1 embedded Pd nanoparticles, we find that the additional holes created by the described charge transfer for intercalated nanoparticulate Pd indeed also enhances the maximum H 2 storage capacity compared to identical nanoparticles covered with PVP.…”
Section: Introductionsupporting
confidence: 87%
“…Furthermore, a charge transfer from Pd to the Si of the nanosheets was reported before. [22] The amount of hydrogen that can be absorbed strongly correlates with the amount of 4d band holes in the conduction band at the Fermi level. [30] Based on the band filling effect, the more holes in the 4d band, the more hydrogen can be absorbed as the transfer of H 1s electrons into these holes creates the PdÀ H bonds.…”
Section: Figure 3 A)mentioning
confidence: 99%
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