Herein, we demonstrated the controllable synthesis of a centimeter-scale two-dimensional (2D) ZnO-doped Ga 2 O 3 nanostructure layer by a liquid Ga−Zn alloy printing strategy at near room temperature. Different from the liquid Ga−In and Ga− In−Sn alloys, the surface oxidation behavior of a liquid Ga−Zn alloy follows an obvious competition and cooxidation characteristics instead of the dominant oxidation characteristic of Ga, which could be effectively used to precisely tailor the Zn content of 2D Ga 2 O 3 films. With an increase of the nominal Zn content in the Ga−Zn alloy from 0 to 8 atom %, the real Zn content of 2D ZnOdoped Ga 2 O 3 films gradually increases and finally reaches a maximum saturated value of 16−18 atom % at the eutectic component of 3.87 atom %. Correspondingly, the transmittance and band gap of 2D ZnO-doped Ga 2 O 3 films could also be tuned by changes of the Zn content and crystallinity. The method proposed in this work provides a general route toward the doping synthesis of a diverse nonlayered 2D structure, which will shed light on the applications of various displays and deep-ultraviolet optoelectronic devices.