Nanometer size field effect transistors for terahertz detectors

Knap, W.; Rumyantsev, Sergey; Vitiello, Miriam S.; Coquillat, Dominique; Blin, S.; Dyakonova, N.; Shur, M. S.; Теппе, Ф.; Tredicucci, Alessandro; Nagatsuma, Tadao

doi:10.1088/0957-4484/24/21/214002

Cited by 85 publications

(57 citation statements)

References 57 publications

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“…Unique physical properties of graphene, such as the gapless linear energy spectrum, pure two-dimensional (2D) transport, strong plasmonic response, and comparatively high mobility at room temperature, open the prospect of high-speed electronics and optoelectronics, in particular, fast and sensitive detection of light for a range of frequencies from ultraviolet to terahertz (THz). Different mechanisms, by which the detection can be accomplished, include (i) photoconductivity due to bolometric and photogating effects [6][7][8], (ii) photothermoelectric (Seebeck) effect [9], (iii) separation of the photoinduced electron-hole pairs in a periodic structure with two different metals serving as contacts to graphene [10,11] (double comb structures) or a p-n junction [12], and (iv) excitation of plasma waves in a gated graphene sheet [13,14] (for reviews, see [15][16][17][18][19][20][21]). As we show in the following, graphene-based detectors may operate applying ratchet effects excited by THz radiation in a 2D crystal superimposed by a lateral periodic metal structure.…”

Section: Introductionmentioning

confidence: 99%

Terahertz ratchet effects in graphene with a lateral superlattice

et al. 2016

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Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlattice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by interdigitated comblike dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near-field effects of the light diffraction.

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Section: Introductionmentioning

confidence: 99%

Terahertz ratchet effects in graphene with a lateral superlattice

et al. 2016

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“…1,2 They are considered as a good candidate for real-time THz imaging and spectroscopic analysis, 3,4 as well as future THz wireless communications. 5 Devices employing plasmonic effects in FETs have already been applied for room temperature detection of radiation with frequencies from tens of GHz up to several THz and enable the combination of individual detectors in a matrix.…”

Section: Introductionmentioning

confidence: 99%

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Faltermeier

Olbrich

Probst

et al. 2015

Journal of Applied Physics

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Appl. Phys. Lett. 104, 251114 (2014) We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a twodimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx

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“…Finally, we contrast the two-stream instability described here with the more well-known Dyakonov-Shur (DS) instability [29], which has been studied experimentally in fieldeffect transistors [30] and theoretically in graphene [31][32][33]. The DS instability occurs in two-dimensional electron gases, such as field effect transistors, which have a certain range of drift velocities and are subject to boundary conditions of constant total current at one end and constant electric potential at the other.…”

Section: Discussionmentioning

confidence: 96%

Plasma wave instabilities in nonequilibrium graphene

Aryal

Jauho

2016

Phys. Rev. B

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We study two-stream instabilities in a nonequilibrium system in which a stream of electrons is injected into doped graphene. As with equivalent nonequilibrium parabolic band systems, we find that the graphene systems can support unstable charge-density waves whose amplitudes grow with time. We determine the range of wave vectors q that are unstable, and their growth rates. We find no instability for waves with wave vectors parallel or perpendicular to the direction of the injected carriers. We find that, within the small-wave-vector approximation, the angle between q and the direction of the injected electrons that maximizes the growth rate increases with increasing |q|. We compare the range and strength of the instability in graphene to that of twoand three-dimensional parabolic band systems.

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Nanometer size field effect transistors for terahertz detectors

Cited by 85 publications

References 57 publications

Terahertz ratchet effects in graphene with a lateral superlattice

Terahertz ratchet effects in graphene with a lateral superlattice

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Plasma wave instabilities in nonequilibrium graphene

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