Nanometer-scale photon confinement in topology-optimized dielectric cavities

Albrechtsen, Marcus; Lahijani, Babak Vosoughi; Christiansen, Rasmus E.; Nguyen, Vy Thi Hoang; Casses, Laura Nevenka; Hansen, Søren Engelberth; Stenger, Nicolas; Sigmund, Ole; Jansen, Henricus V.; Mørk, Jesper; Stobbe, Søren

doi:10.48550/arxiv.2108.01681

Cited by 5 publications

(15 citation statements)

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“…The dielectric confinement mechanism employed in Refs. [31,[34][35][36] was applied to SHG in Ref. [37], but more work is necessary to understand its potential for reducing the SHG mode volume.…”

Section: Ref Mat Type χNlmentioning

confidence: 99%

“…[37], but more work is necessary to understand its potential for reducing the SHG mode volume. High confinement cavities have been realized in Si [35,36], but measurements of the SPM coupling rate are required to verify their potential. Table I clearly illustrates the advantage of two-level emitters compared to bulk nonlinearities in terms of the nonlinear coupling rate.…”

Section: Ref Mat Type χNlmentioning

confidence: 99%

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Controlled-Phase Gate by Dynamic Coupling of Photons to a Two-Level Emitter

Krastanov,

Jacobs,

Englund

et al. 2021

Preprint

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We propose an architecture for achieving high-fidelity deterministic quantum logic gates on dualrail encoded photonic qubits by letting photons interact with a two-level emitter (TLE) inside an optical cavity. The photon wave packets that define the qubit are preserved after the interaction due to a quantum control process that actively loads and unloads the photons from the cavity and dynamically alters their effective coupling to the TLE. The controls rely on nonlinear wave mixing between cavity modes enhanced by strong externally modulated electromagnetic fields or on AC Stark shifts of the TLE transition energy. We numerically investigate the effect of imperfections in terms of loss and dephasing of the TLE as well as control field miscalibration. Our results suggest that III-V quantum dots in GaAs membranes is a promising platform for photonic quantum information processing.

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Section: Ref Mat Type χNlmentioning

confidence: 99%

Section: Ref Mat Type χNlmentioning

confidence: 99%

Controlled-Phase Gate by Dynamic Coupling of Photons to a Two-Level Emitter

Krastanov,

Jacobs,

Englund

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…Going beyond the single mode picture, multi-mode and dispersion-based effects such as exceptional points [18,19] and slow light devices [20] have also been explored. Recently, complex devices obtained by application of large-scale structural optimization appear to combine several confinement mechanisms [21,22], providing further improvements on device performance.…”

Section: Introductionmentioning

confidence: 99%

Maximum Electromagnetic Local Density of States via Material Structuring

Chao¹,

Defo²,

Molesky³

et al. 2022

Preprint

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The electromagnetic local density of states (LDOS) is crucial to many aspects of photonics engineering, from enhancing emission of photon sources to radiative heat transfer and photovoltaics. We present a framework for evaluating upper bounds on the LDOS in structured media that can handle arbitrary bandwidths and accounts for critical wave scattering effects. The bounds are solely determined by the bandwidth, material susceptibility, and device footprint, with no assumptions on geometry. We derive an analytical expression for the maximum LDOS consistent with the conservation of energy across the entire design domain, which upon benchmarking with topology-optimized structures is shown to be nearly tight for large devices. Novel scaling laws for maximum LDOS enhancement are found: the bounds saturate to a finite value with increasing susceptibility and scale as the quartic root of the bandwidth for semi-infinite structures made of lossy materials, with direct implications on material selection and design applications.

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“…For larger networks, the optical transmission becomes a limiting factor and we therefore design additional EPCCs while relaxing the bandwidth requirement and allowing for smaller but still feasible gaps [27]. Figure 4 shows EPCCs for (a) 100 nm, (b) 60 nm, and (c) 20 nm isolation gaps topology-optimized for maximum transmission at 1550 nm.…”

mentioning

confidence: 99%