Nanoindentation and near-field spectroscopy of single semiconductor quantum dots

Photoluminescence pressure coefficients ofInAs∕GaAsquantum dots

“…While the PL pressure coefficients (PC) for both bulk InAs and GaAs are close to 120 meV /GP a, it is found experimentally that the PL pressure coefficients for the quantum dots are usually much smaller and they can vary significantly from 60 meV /GP a to 100 meV /GP a [6,7,8,9,10,11] depending on the samples. While Ma et al attributed the main reason for the much smaller PC to the built-in strain in InAs dots under nonlinear elasticity theory [6], Mintairov et al emphasized the nonuniform In distribution in QD [13]. Thus more quantitative analysis and understanding are needed here.…”

Optical transition in self-assembled InAs/GaAs quantum lens under high hydrostatic pressure

“…It is reported a significant decreasing in the hydrostatic pressure coefficient (PC) for InAs/GaAs QDs in comparison with bulk material. Different experimental works have proposed some explanations: non-uniform Indium distribution in the QDs 33 , pressure dependence of the effective masses and confined potential 32 , and the necessity to include a nonlinear strain distribution 26 and band-gap pressure dependence and finite barriers 34 . From the theoretical point of view some works have been devoted to explain the obtained low value of hydrostatic PC.…”

Direct determination of intrinsic Inx Ga1–xP (x = 0.49) band‐gap deformation potentials by cathodoluminescence piezo‐spectroscopy

“…Priester et al [3] theoretically calculated, within the tight-binding approximation, hydrostatic and uniaxial deformation potentials. More recently, Mitranov et al [10] used such data to interpret their experimental data by near-field spectroscopy on InP on GaInP quantum dots. A comparison between the present experimental data and theoretical or extrapolated values of deformation potentials for In x Ga 1-x P as retrieved from the literature (i.e., according to interpolations from GaP/InP data and to theoretical calculations, re- spectively) is given in Table 1.…”

“…The deformation potentials of In x Ga 1-x P have not yet been experimentally determined in a direct way and are usually extrapolated from experimental values retrieved for InP and GaP [4,[9][10][11], according to a linear relationship to the mole fraction, x, as proposed by Adachi [4]. Experimental strain assessments on epitaxial films are then based on such approximated values of deformation potentials and were reported for In 0.5 Ga 0.5 P by Asai and Oe [9].…”