Nanofretting behaviors of monocrystalline silicon (100) against diamond tips in atmosphere and vacuum

Yu, Jiaxin; Qian, Linmao; Yu, Bingjun; Zhou, Zhongrong

doi:10.1016/j.wear.2008.11.008

Cited by 41 publications

(33 citation statements)

References 22 publications

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“…It is found that F t-max almost remains unchanged with the increase in N for all the F t-max -N curves in the stick regime (D B 3.4 nm for R = 0.43 lm and D B 5.1 nm for R = 1.0 lm). However, while the nanofretting runs in slip regime, F t-max remains constant in the first 10 cycles and then shows a little decrease with the increase in N. These results are similar as those obtained in the nanofretting tests of Si/diamond pair [22] and NiTi/ diamond pair in atmosphere [14], but very different from those obtained in the fretting tests of the hard steel/Cr-steel pair or the sintered alumina/Cr-steel pair in vacuum [23]. As the fretting run in vacuum, F t-max usually increased sharply in the initial cycles and then remained stable or revealed a decrease [23].…”

Section: Introductionsupporting

confidence: 87%

Nanofretting Behavior of Monocrystalline Silicon (100) Against SiO2 Microsphere in Vacuum

Qian

et al. 2008

Tribol Lett

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With an atomic force microscopy, the tangential nanofretting between spherical SiO 2 tips and monocrystalline Si(100) surface was carried out at various displacement amplitudes (0.5-250 nm) under vacuum condition. Similar to fretting, the nanofretting of Si(100)/ SiO 2 pair could also be divided into stick regime and slip regime upon the transition criterion. However, it was found that the energy ratio corresponding to the transition between two nanofretting regimes varied between 0.32 and 0.64, which was higher than the normal value of 0.2 for the transition criterion to determine the partial slip and gross slip regimes in fretting. One of the reasons may be attributed to the effect of adhesion force, since whose magnitude is at the same scale to the value of the applied normal load in nanofretting. During the nanofretting process of Si(100)/ SiO 2 pair, the adhesion force may induce the increase in the maximum static friction force and prevent the contact pair from slipping. The higher the applied load, or the higher the adhesion force, the larger will be the transition displacement amplitude between two regimes in nanofretting. Different from fretting wear, the generation of hillocks was observed on Si(100) surface under the given conditions in nanofretting process. With the increase in the displacement amplitude in slip regime of nanofretting, the height of hillocks first increased and then attained a constant value. Compared to chemical reaction, the mechanical interaction may be the main reason responsible for the formation of silicon hillocks during the nanofretting in vacuum. The results in the research may be helpful to understand the nanofretting failures of components in MEMS/NEMS.

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Section: Introductionsupporting

confidence: 87%

Nanofretting Behavior of Monocrystalline Silicon (100) Against SiO2 Microsphere in Vacuum

Qian

et al. 2008

Tribol Lett

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“…2. During the first several cycles, the friction loop was in a parallelogram shape, which has been observed elsewhere [15,16]. At the fifth cycle, the parallelogram quickly changed to the shape of an hourglass.…”

Section: Running-in Process Of Si/sio 2 Pairsupporting

confidence: 65%

Running-in process of Si-SiO x /SiO2 pair at nanoscale—Sharp drops in friction and wear rate during initial cycles

et al. 2013

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Abstract:Using an atomic force microscope, the running-in process of a single crystalline silicon wafer coated with native oxide layer (Si-SiO x ) against a SiO 2 microsphere was investigated under various normal loads and displacement amplitudes in ambient air. As the number of sliding cycles increased, both the friction force F t of the Si-SiO x /SiO 2 pair and the wear rate of the silicon surface showed sharp drops during the initial 50 cycles and then leveled off in the remaining cycles. The sharp drop in F t appeared to be induced mainly by the reduction of adhesion-related interfacial force between the Si-SiO x /SiO 2 pair. During the running-in process, the contact area of the Si-SiO x /SiO 2 pair might become hydrophobic due to removal of the hydrophilic oxide layer on the silicon surface and the surface change of the SiO 2 tip, which caused the reduction of friction force and the wear rate of the Si-SiO x /SiO 2 pair. A phenomenological model is proposed to explain the running-in process of the Si-SiO x /SiO 2 pair in ambient air. The results may help us understand the mechanism of the running-in process of the Si-SiO x /SiO 2 pair at nanoscale and reduce wear failure in dynamic microelectromechanical systems (MEMS).

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“…8 The main difference to more "classical" ways to describe wear effects [e.g. 30,31] might be seen in its successive or even hierarchic built-up of the model from first, but effective principles to phenomenological parameters and from static or quasi static measurements to dynamic tests (Fig.…”

Section: Wear Model Detailsmentioning

confidence: 99%

“…Varenberg et al studied partial and gross slip fretting behaviour of 3.1 m diameter scanning probe microscopy probes tested against Si wafers [7]. Nanofretting behaviour of monocrystalline silicon for potential application in MEMS devices operating in vacuum conditions was studied by Yu et al using AFM tips [8][9]. The energy ratio related to the transition from partial to gross slip regime was measured and compared to the same energy ratio observed in classic macroscale fretting.…”

Section: Introductionmentioning

confidence: 99%

Short note on improved integration of mechanical testing in predictive wear models

Liskiewicz

Beake

Schwarzer³

et al. 2013

Surface and Coatings Technology

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Nanofretting behaviors of monocrystalline silicon (100) against diamond tips in atmosphere and vacuum

Cited by 41 publications

References 22 publications

Nanofretting Behavior of Monocrystalline Silicon (100) Against SiO2 Microsphere in Vacuum

Nanofretting Behavior of Monocrystalline Silicon (100) Against SiO2 Microsphere in Vacuum

Running-in process of Si-SiO x /SiO2 pair at nanoscale—Sharp drops in friction and wear rate during initial cycles

Short note on improved integration of mechanical testing in predictive wear models

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