Nanoforest of black silicon fabricated by AIC and RIE method

Tan, Qiulin; Tang, Licheng; Mao, Haiyang; Chen, Yuanjing; Ren, Yaohui; Cheng, Liang; Yan, Feng; Ou, Wen; Xiong, Jijun

doi:10.1016/j.matlet.2015.11.062

Cited by 9 publications

(5 citation statements)

References 14 publications

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“…Since the discovery of black silicon materials in the late 20th century [ 9 ], after more than 20 years of development, black silicon has been fabricated in a variety of ways. Since the black silicon was discovered, common fabricating methods include nanosecond or femtosecond laser irradiation [ 8 , 9 , 10 , 11 ], metal-assisted chemical etching (MACE) [ 12 , 13 , 14 , 15 ], reactive ion etching (RIE) [ 16 , 17 , 18 ], wet chemical etching [ 19 ], and plasma immersion ion implantation (PIII) methods. Each fabrication method can fabricate black silicon with a micro-nano surface structure.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

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Section: Introductionmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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“…The self-formation of the Si needles occurs as a consequence of spatial inhomogeneities in deposition and etching processes during plasma processing caused by the specific interactions of nucleation and deposition of the passivation system and the removal by ion bombardment and chemical etching [5,6]. As a consequence of the interaction of different spatial inhomogeneities a high density of etching residues or the passivation layer formed during the early stages of the etching process.…”

Section: Resultsmentioning

confidence: 99%

“…The mixture SF 6 /O 2 is non-toxic and easy to handle. The process pressure was 55 mTorr and gas flow rates were 75 cm 3 /min and 40 cm 3 /min for SF 6 and O 2 , respectively. Samples were placed on the water-cooled (23°C) bottom electrode that was powered by a 13.56 MHz RF generator.…”

Section: Fig 2 Construction Of B-si Solar Cellmentioning

confidence: 99%

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Optimization of surface reflectance for silicon solar cells

2018

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A study on the formation of black silicon (b-Si) antireflection layers on crystalline Si wafers using SF 6 /O 2 gas mixture in a reactive ion etching method is presented. The process is low-temperature, fast and does not depend on the crystallographic orientation of the Si wafer. The b-Si layers have demonstrated average reflectance values of 4% and 5% for mono-and polycrystalline Si wafers respectively, feature that is suitable for the fabrication of high efficiency solar cells. Passivation of b-Si antireflection layers by suitable different thin films can significantly reduce needle-like surface recombination losses.

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“…However, given the processing performance, production efficiency, and cost, the fabrication of microstructures on a large-scale silicon surface is still a challenge for researchers and engineers. Several methods have been presented to process the microstructures on the silicon surface, including metal-assisted chemical etching (MACE) [ 20 , 21 ], wet chemical etching [ 22 ], reactive-ion etching (RIE) [ 23 , 24 ], and laser processing [ 25 , 26 ]. Laser technology demonstrates a prospective approach due to its flexibility, precision, and compatibility with CMOS processing.…”

Section: Introductionmentioning

confidence: 99%

Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air

Wen

Zhang

et al. 2022

Nanomaterials

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Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF6 atmosphere. Considering the effect of SF6 gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale black silicon. In the wavelength range of 0.3–2.5 µm, the role of air could replace SF6 gas to texture black silicon by laser inducing with appropriate processing parameters. Then, to extend the working window of its excellent light-trapping status, laser-plasma shockwave cleaning was introduced to eliminate the deposition and improve the structures and morphology. The results revealed that the micro-nano structures became higher, denser, and more uniform with increasing cleaning times and deteriorating cleaning velocity, which compensated for the role of S atoms from the ambient SF6. Moreover, absorptance above 85% in the wavelength range of 0.3–15 µm was realized using our method. The effect of scanning pitch between adjacent rows on large-scale black silicon was also discussed. Our method realized the ultrahigh absorptance of large-scale black silicon fabricated in air from visible to mid-infrared, which is of significance in the field of optoelectronic devices.

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Nanoforest of black silicon fabricated by AIC and RIE method

Cited by 9 publications

References 14 publications

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Progress of Black Silicon: From Fabrications to Applications

Optimization of surface reflectance for silicon solar cells

Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air

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