Nanofilaments in Ta-O ReRAM Bit Array Fabricated Using 40 nm CMOS Process

A 0.11pJ/bit read energy embedded NanoBridge non-volatile memory and its integration in a 28 nm 32 bit RISC-V microcontroller units

“…It is suggested that its process complexity and high integration cost make it difficult to scale beyond 28 nm. 8) Emerging nonvolatile memories (NVM), such as resistive RAM (ReRAM), 9) phase-change memory (PCM), 10) magnetic RAM (MRAM) 11) and ferroelectric RAM (FeRAM) 12) are promising candidates to replace the eFLASH thanks to their scalability below 10 nm. 13) Our NanoBridge (NB) (a.k.…”

Filamentary switching of ReRAM investigated by in-situ TEM

“…[7][8][9][10][11][12][13][14][15] Because of these promising potential applications, a large number of studies have investigated ReRAMs, ranging from materials and devices to circuits. [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] Their integration into practical memory chips has continued to advance and a 16 Gbit memory chip was reported with write and read speeds of 180 MB s −1 and 900 MB s −1 , respectively. 33) However, while the fundamental operating mechanism can be explained based on the electrochemical reaction, [16][17][18] the cyclic resistance switching and device degradation mechanisms have not yet been fully understood.…”