A 28nm 512Kb NanoBridge non-volatile memory is developed for an energy-efficient microcontroller unit. 0.11pJ/bit read energy is achieved by utilizing an inverter sense scheme thanks to large ON/OFF conductance ratio of a split-electrode NanoBridge. The read energy is 71% and 54% less than those of a ReRAM and a SONOS commercial embedded NOR Flash at the same technology node, respectively. Moreover, a 28nm 32-bit RISC-V microcontroller unit embedded with a 2Mb NanoBridge non-voltage memory is fabricated and achieves 80MHz operation frequency.