Nanofibers for RF and Beyond

Wallis, Thomas M.; Kim, Ki-Chul; Filipović, Dejan S.; Kaboš, Pavel

doi:10.1109/mmm.2011.942763

Cited by 13 publications

(1 citation statement)

References 34 publications

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“…Recent progress toward the scaling of silicon transistors down to single-atom devices [1] has motivated the requirement for nanoscale interconnects. [2] Conventional metals have limitations as they approach nanoscale dimensions due to resistivity scaling from surface and grain boundary scattering effects, and the difficulties in extending lithography techniques to sub-100 nm. [3] Favorable microwave properties have been shown for both macroscopic mono-layer graphene sheets [4][5][6][7][8][9] and carbon nano-tubes (CNTs), [10][11][12][13][14] leading to the development of theoretical models for nanoscale transmission lines in graphene.…”

Section: Introductionmentioning

confidence: 99%

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Chapman

Votsi

Stock

et al. 2022

Adv Elect Materials

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Low‐dimensional microwave interconnects have important applications for nanoscale electronics, from complementary metal–oxide‐semiconductor (CMOS) to silicon quantum technologies. Graphene is naturally nanoscale and has already demonstrated attractive electronic properties, however its application to electronics is limited by available fabrication techniques and CMOS incompatibility. Here, the characteristics of transmission lines made from silicon doped with phosphorus are investigated using phosphine monolayer doping. S‐parameter measurements are performed between 4–26 GHz from room temperature down to 4.5 K. At 20 GHz, the measured monolayer transmission line characteristics consist of an attenuation constant of 40 dB mm−1 and a characteristic impedance of 600 Ω. The results indicate that Si:P monolayers are a viable candidate for microwave transmission and that they have a.c. properties similar to graphene, with the additional benefit of extremely precise, reliable, stable, and inherently CMOS compatible fabrication.

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