Nanofabrication of 80 nm asymmetric T shape gates for GaN HEMTs

Shao, Jinhai; Deng, Jing‐Fa; Lu, Wu; Chen, Yifang

doi:10.1016/j.mee.2017.12.001

Cited by 9 publications

(4 citation statements)

References 10 publications

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“…In this way, the buffer induced gate-lag, drain-lag and current collapse are relieved. Similarly, Suemitsu et al [115] and Shao et al [116] proposed a gate with slant and sloped field plate respectively in The results of the pulsed I DS -V DS measurement show that the slant/sloped field plate is effective for suppressing current collapse. Furthermore, a kind of three-dimensional field plate (3DFP) structure is proposed by Suzuki et al [117], as displayed in Fig.…”

Section: Gate/source Field Platementioning

confidence: 92%

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An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

et al. 2022

IEEE Access

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Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high power and high frequency applications. However, the existence of damages, defects and dislocations still degrade the device features because of trapping effects. In this paper, investigations of trapping effects are summarized and discussed to understand the inner mechanism, including the gate-lag and drain-lag transient responses, the current collapse of pulsed I DS -V DS , the dependence of frequency dispersion, the transient current reduction with pulsed-RF excitation and the kink effect. In addition, recent methods of suppressing trapping effects are reviewed, including surface passivation, GaN cap layer, gate/source field plate, buffer engineering and structure modification. The profits and shortages of each method are compared and discussed.INDEX TERMS GaN HEMT, trapping effects, current collapse, suppression methods.

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Section: Gate/source Field Platementioning

confidence: 92%

“…(a) Cross-sectional view of AlGaN/GaN HEMT with slant field plate[115]. (b) Cross-sectional view of AlGaN/GaN HEMT with proposed asymmetric T shape gate[116].…”

mentioning

confidence: 99%

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

et al. 2022

IEEE Access

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“…As a result, gate/source field plate is useful to reduce the trapping risk from the surface traps in the drain access region (see Fig. 9) [57,[69][70][71] .…”

Section: Suppression Of Trapping Effectsmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

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“…81 All integrals are obtained using PySCF 82 and some of the calculations were verified using Q-Chem. 83 Exact energies within a basis were all obtained using a brute-force approach called heat-bath configuration interaction (HCI). 84 For AFQMC, we used more than 1000 walkers in all numerical data presented here to ensure that the population control bias is negligible.…”

Section: H 4 8-qubit Experimentsmentioning

confidence: 99%

Unbiasing Fermionic Quantum Monte Carlo with a Quantum Computer

Huggins,

O'Gorman,

Rubin

et al. 2021

Preprint

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Many-electron problems pose some of the greatest challenges in computational science, with important applications across many fields of modern science. Fermionic quantum Monte Carlo (QMC) methods are among the most powerful approaches to these problems. However, they can be severely biased when controlling the fermionic sign problem using constraints, as is necessary for scalability.Here we propose an approach that combines constrained QMC with quantum computing tools to reduce such biases. We experimentally implement our scheme using up to 16 qubits in order to unbias constrained QMC calculations performed on chemical systems with as many as 120 orbitals. These experiments represent the largest chemistry simulations performed on quantum computers (more than doubling the size of prior electron correlation calculations), while obtaining accuracy competitive with state-of-the-art classical methods. Our results demonstrate a new paradigm of hybrid quantum-classical algorithm, surpassing the popular variational quantum eigensolver in terms of potential towards the first practical quantum advantage in ground state many-electron calculations.

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Nanofabrication of 80 nm asymmetric T shape gates for GaN HEMTs

Cited by 9 publications

References 10 publications

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Unbiasing Fermionic Quantum Monte Carlo with a Quantum Computer

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