Nanoengineering of MXene-Based Field-Effect Transistor Gas Sensors: Advancements in Next-Generation Electronic Devices

Abstract

Two-dimensional materials have garnered significant attention in recent years due to their unique physical and chemical properties, making them promising candidates for advanced electronic technologies. Graphene, in particular, has shown extraordinary qualities with the potential for highly efficient and durable electronic devices, overcoming technological limitations associated with downsizing. However, the absence of a band gap in graphene's structure has led researchers to explore alternative materials for transistor applications. MXene and its derivatives were developed in response to this shift in emphasis as potential solutions for constructing electronic systems. Simple changes in surface termination, the introduction of metal ions, careful management of etching duration, and suitable surface functionalization can improve the characteristics of MXene, which are similar to those of graphene. These modifications result in the desired band structure, enabling advanced applications. This review provides an overview of the most recent advancements in MXene-based materials design, highlighting challenges and future prospects, specifically focusing on the efficient design of field-effect transistor (FET) gas sensing devices. The underlying goal is to familiarize the readers with the MXene in FET-based sensing applications and summarize recent development in this field to transition to next-generation electronic devices.

Ti3C2O2 MXene single-layer as a nanoscale transport device

“…Our results in figure 4 indicate that the current increases with increasing electric field under a constant bias voltage. The proposed nanoscale MXenebased FET may extend the sensing applications of current FET devices [28][29][30]32] to single molecule detection level and improve the switching time.…”

“…In addition, MXene field effect transistors were utilized in the detection of Ag ion [30] and alkali sensing in harsh environments [31]. MXene-based field-effect transistors are now considered as efficient sensing medium [32].…”

Future prospects of MXenes: synthesis, functionalization, properties, and application in field effect transistors

“…MXene based FETs have now been used in many other applications like gas sensors, 155 electrochemical transistors, 156 metal halide perovskite vertical FETs, 143 graphene–MXene based materials for diagnosis, 157 etc.…”

A Three-Dimensional AgNPs/TiO2/Ti3C2Tx Composite for Label-Free Thrombin Aptamer Sensor

“…Among them, MXenes exhibit excellent electrical conductivity and high surface area, making them highly promising materials for sensing applications. MXenes possess a two-dimensional structure with a significant number of accessible active sites and short diffusion paths, 17 which have been successfully used as modified materials in electrochemical sensors for the detection of diverse analytes, including harmful gases, 18,19 various biomarkers, 20,21 and some environmental pollutants. 22,23 Due to its nanosheet structure, MXenes experience a limitation in which they tend to re-stack.…”