“…These single-electron nanodevices ,, are possible due to the carrier confinement and Coulomb blockade effects exhibited by the very narrow SiNWs and/or very small SiNDs in the nano regime. Indeed, 15 nm wide silicon nanowire channel and 5−10 nm isolated silicon islands were used in the work of Tsutsumi, et al This is a fast-developing technology; the reader is referred to many excellent reviews and books in the literature. − , 105 SEM photograph of the Si nanowire and side gates fabricated by using inorganic electron beam (EB) resist process. The width, height, and length of the Si nanowire are 15, 20, and 438 nm, respectively.…”
Boon K. Teo received his B.Sc. (Hons, First Class) degree from the Chinese University of Hong Kong in 1969 and his Ph.D. degree from the University of Wisconsin (Madison) in 1973. He then worked at AT&T Bell Labs (Murray Hill, NJ) for a dozen years before joining the University of Illinois at Chicago in 1986 as a tenured professor. He is author or coauthor of hundreds of publications (including 20 reviews and book chapters), three books, and two patents. Professor Teo has a very broad research interest, including the synthesis, structure, bonding, and properties of supersized metal clusters, supramolecular chemistry, molecular and crystal engineering, molecular orbital and density function calculations, X-ray crystallography, synchrotron radiation research (EXAFS, XANES), nonlinear optical materials (optical limiters), and, more recently, nanomaterials (silicon nanowires and carbon nanotubes), and nanotechnology. One of his publications, J. Am. Chem. Soc. 1979, 101, 2815, was selected as one of the "all-time 125 most-cited JACS publications" in the 125th volume of the journal in 2003. He is also the cofounder and current coeditor of J.Cluster Sci. Professor Teo dedicates his free time to helping countless underprivileged students by building/donating primary schools in impoverished regions of the world, especially the Midwest of China.
“…These single-electron nanodevices ,, are possible due to the carrier confinement and Coulomb blockade effects exhibited by the very narrow SiNWs and/or very small SiNDs in the nano regime. Indeed, 15 nm wide silicon nanowire channel and 5−10 nm isolated silicon islands were used in the work of Tsutsumi, et al This is a fast-developing technology; the reader is referred to many excellent reviews and books in the literature. − , 105 SEM photograph of the Si nanowire and side gates fabricated by using inorganic electron beam (EB) resist process. The width, height, and length of the Si nanowire are 15, 20, and 438 nm, respectively.…”
Boon K. Teo received his B.Sc. (Hons, First Class) degree from the Chinese University of Hong Kong in 1969 and his Ph.D. degree from the University of Wisconsin (Madison) in 1973. He then worked at AT&T Bell Labs (Murray Hill, NJ) for a dozen years before joining the University of Illinois at Chicago in 1986 as a tenured professor. He is author or coauthor of hundreds of publications (including 20 reviews and book chapters), three books, and two patents. Professor Teo has a very broad research interest, including the synthesis, structure, bonding, and properties of supersized metal clusters, supramolecular chemistry, molecular and crystal engineering, molecular orbital and density function calculations, X-ray crystallography, synchrotron radiation research (EXAFS, XANES), nonlinear optical materials (optical limiters), and, more recently, nanomaterials (silicon nanowires and carbon nanotubes), and nanotechnology. One of his publications, J. Am. Chem. Soc. 1979, 101, 2815, was selected as one of the "all-time 125 most-cited JACS publications" in the 125th volume of the journal in 2003. He is also the cofounder and current coeditor of J.Cluster Sci. Professor Teo dedicates his free time to helping countless underprivileged students by building/donating primary schools in impoverished regions of the world, especially the Midwest of China.
“…Extensive theoretical work to calculate current-voltage (I-V) characteristics of single molecules was developed [1][2][3][4][5][6] right after the first break-junction experiment addressing a single molecule was reported [7]. Most of these theoretical techniques involved the use of the Landauer formalism [8] in order to have a relation between the response current of an applied voltage to a nano-sized molecular junction.…”
“…where without loss of generality we have considered zero ground state energy of H − 0 and the two partner potentials V ∓ 0 can be written in terms of superpotential W 0 and mass function, as 4) which implies that for a physically acceptable mass function 1 the superpotential and hence two partner potentials V ∓ 0 are free from singularity (provided the given potential V − 0 is without any singularity). It is well established that when SUSY is unbroken then the spectrum of the two PDM partner Hamiltonians H ∓ are degenerate except for the lowest energy of H − 0 .…”
Section: A Usual Factorizationmentioning
confidence: 99%
“…The concept of position dependent mass comes from the effective mass approximation [3] which is an useful tool for studying the motion of carrier electrons in pure crystals and also for the virtual-crystal approximation in the treatment of homogeneous alloys as well as in graded mixed semiconductors. This field has also arisen due to the impressive development in crystallographic growth techniques [4] which allow the production of non uniform semiconductor specimen with abrupt heterojunctions (see e.g., [5] for a review). In different areas of possible applications of low dimensional structures as already mentioned, there is need to have Hamiltonians with predetermined energy spectrum.…”
The modified factorization technique of a quantum system characterized by position-dependent mass Hamiltonian is presented. It has been shown that the singular superpotential defined in terms of a mass function and a excited state wave function of a given position-dependent mass Hamiltonian can be used to construct non-singular isospectral Hamiltonians. The method has been illustrated with the help of a few examples.
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