Nanoelectronics

Bate, R. T.

doi:10.1088/0957-4484/1/1/001

Cited by 30 publications

(4 citation statements)

References 5 publications

(3 reference statements)

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“…Earlier work on the problem was restricted to two dimensions, and carried out for 50 times fewer atoms than we consider here. 4 The simulations begin by preparing a Si ͓111͔ surface in its ground state. The sample consists of 34 560 atoms distributed over 24 layers.…”

Section: Modeling and Simulationsmentioning

confidence: 99%

Nanoscale modification of silicon surfaces via Coulomb explosion

Cheng

Gillaspy

1997

Phys. Rev. B

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Coulomb explosions on silicon surfaces are studied using large-scale molecular-dynamics simulations. Processes under investigation begin by embedding a region consisting of 265-365 singly charged Si ϩ ions on a Si ͓111͔ surface. The repulsive electrostatic energy, initially stored in the charged region, leads to a local state with ultrahigh pressure and stress. During the relaxation process, part of the potential energy propagates into the surrounding region while the remainder is converted to kinetic energy, resulting in a Coulomb explosion. Within less than 1.0 ps, a nanometer-sized hole on the surface is formed. A full analysis of the density, temperature, pressure, and energy distribution as functions of time reveals the time evolution of physical properties of the systems related to the violent explosive event. A shock wave that propagates in the substrate is formed during the first stage of the explosion, 0ϽtϽ100 fs. The speed of the shock wave is twice the average speed of sound. After the initial shock the extreme nonequilibrium conditions leads to ultrarapid evaporation of Si atoms from the surface. Qualitatively similar features are observed on a smaller scale when the number of initial surface charges is reduced to 100. Our simulations demonstrate the details of a process that can lead to permanent structure on a semiconductor surface at the nanoscale level. The work reported here provides physical insights for experimental investigations of the effects of slow, highly charged ions (Q Ͼ40, e.g.͒ on semiconductor materials.

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Section: Modeling and Simulationsmentioning

confidence: 99%

Nanoscale modification of silicon surfaces via Coulomb explosion

Cheng

Gillaspy

1997

Phys. Rev. B

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“…Nano-/micro structures fabrication is not only of immense importance for the technology involved in electronics but also plays an important role for carrying out investigations relating to behavior of materials at sub-micron scales (1)(2)(3)(4). A variety of possible applications based on microstructures include highpower microwave generation, ultra-fast computer and tera-hertz amplifier devices, radiation and temperatureinsensitive electronics, field emitters, electrochemistry, conductive polymer nanofibres fabrication, transparent metal structures and macroscopic quantum tunneling phenomenon.…”

Section: Introductionmentioning

confidence: 99%

Nano-/micro metallic wire synthesis on Si substrate and their characterization

Kaur¹,

Kaur²,

Singh³

et al. 2014

AIP Conference Proceedings

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Nano-/micro wires of copper are grown on semiconducting Si substrate using the template method. It involves the irradiation of 8 um thick polymeric layer coated on Si with150 MeV Ni ion beam at a fluence of 2E8. Later, by using the simple technique of electrodeposition, copper nano-/micro wires were grown via template synthesis. Synthesized wires were morphologically characterized using SEM and electrical characterization was carried out by finding I-V plot.

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“…Quantum phenomena, such as electron tunnelling, play an important role for devices with functional structures at the nanometre scale. Devices based on quantum effects [1,2] generally exhibit short switching times and low energy consumption. Among various approaches to realize nanocircuits, chemically synthesized metal clusters are a promising candidate for the construction since they can be produced almost monodispersely in a sufficient quantity [3].…”

Section: Introductionmentioning

confidence: 99%

Negative differential resistance and nonclassical capacitive behaviour in networks of metal clusters

Zhang¹,

Mautes²,

Hartmann³

2007

Nanotechnology

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Monolayers of small metal clusters of type Au55[P(C6H5)3]12Cl6 were investigated with a low-temperature ultrahigh vacuum scanning tunnelling microscope. Apart from the usual charge-quantization phenomena, such as Coulomb blockade and staircase, negative differential resistance was observed by performing measurements at distinct locations on the cluster layers. The latter phenomenon can be understood from a ‘gate’ effect caused by neighbouring clusters and involving a nonclassical behaviour of the capacitances generated by the nanoscale tunnel junctions.

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Nanoelectronics

Cited by 30 publications

References 5 publications

Nanoscale modification of silicon surfaces via Coulomb explosion

Nanoscale modification of silicon surfaces via Coulomb explosion

Nano-/micro metallic wire synthesis on Si substrate and their characterization

Negative differential resistance and nonclassical capacitive behaviour in networks of metal clusters

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