Nanoelectromechanical resonators for gigahertz frequency control based on hafnia–zirconia–alumina superlattices

Tharpe, Troy; Hershkovitz, Eitan; Hakim, Faysal; Kim, Honggyu; Tabrizian, Roozbeh

doi:10.1038/s41928-023-00999-9

Cited by 13 publications

(3 citation statements)

References 54 publications

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“…Piezoelectricity characterized by the piezoelectric constitutive relations is the linear coupling effect of the electromechanic fields in non-centrosymmetric crystals and is determined by lattice symmetry. The conversion of mechanical energy into electrical energy and vice versa, is of extensively used in wireless communications 17 – 19 , acousto-optic modulation 20 – 22 , bioacoustics 23 , 24 , nanoacoustics 25 – 28 , etc. Particularly, RF bandpass filters with larger physical bandwidth are urgently needed to significantly expanded data capacity as the rapid development of 5th generation (5 G) and future 6 G wireless communication technology.…”

Section: Introductionmentioning

confidence: 99%

Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

Yao,

Zheng,

Zhang

et al. 2024

Nat Commun

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Twisted a pair of stacked two-dimensional materials exhibit many exotic electronic and photonic properties, leading to the emergence of flat-band superconductivity, moiré engineering and topological polaritons. These remarkable discoveries make twistronics the focus point of tremendous interest, but mostly limited to the concept of electrons, phonons or photons. Here, we present twist piezoelectricity as a fascinating paradigm to modulate polarization and electromechanical coupling by twisting precisely the stacked lithium niobate slabs due to the interlayer coupling effect. Particularly, the inversed and twisted bilayer lithium niobate is constructed to overcome the intrinsic mutual limitation of single crystals and giant effective electromechanical coupling coefficient $${k}_{t}^{2}$$ k t 2 is unveiled at magic angle of $$111^\circ$$ 11 1 ∘ , reaching 85.5%. Theoretical analysis based on mutual energy integrals shows well agreements with numerical and experimental results. Our work opens new venues to flexibly control multi-physics with magic angle, stimulating progress in wideband acoustic-electric, and acoustic-optic components, which has great potential in wireless communication, timing, sensing, and hybrid integrated photonics.

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Section: Introductionmentioning

confidence: 99%

Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

Yao,

Zheng,

Zhang

et al. 2024

Nat Commun

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“…The ferroelectric character of hafnia implies that it also demonstrates piezoelectricity, which is of relevance for many applications such as nanoelectromechanical systems. − Studies of the impact of the dopant level using macroscopic piezoelectric response experiments indicate that the piezoelectric response magnitude is mainly correlated with the presence of the tetragonal (antiferroelectric) and orthorhombic (ferroelectric) phases. − Piezoelectric force microscopy (PFM) has been shown to be an effective method to analyze the ferroelectric nature of materials at the nanoscale . In more recent reports, in situ tracking of the tetragonal-to-orthorhombic phase transition in antiferroelectric-like hafnia samples has been revealed by PFM .…”

Section: Introductionmentioning

confidence: 99%

Effects of Doping, Stress, and Thickness on the Piezoelectric Response and Its Relation with Polarization in Ferroelectric HfO₂

Tan,

Estandía,

Sánchez

et al. 2023

ACS Appl. Electron. Mater.

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The piezoelectric response in hafnia is of interest because it is a CMOScompatible material. It is known that polarization depends on the stabilization of the orthorhombic phase, which depends on several parameters, such as doping, stress, and thickness. Here, the piezoelectric response in epitaxial doped HfO 2 films characterized by piezoelectric force microscopy, is investigated considering this multifactorial dependence. The impact of different levels of La and Zr doping, variations of stress effects controlled by substrate selection, and thickness effects on piezoresponse is analyzed. It is found that the piezoelectric response is mainly correlated with the polarization, i.e., it is primarily determined by the amount of the orthorhombic phase. Interestingly, Zr doping of hafnia is observed to result in a larger piezoresponse than La doping for films showing similar polarization. The piezoresponse is found to be the greatest for the pure ZrO 2 film; however, the actual ferroelectric response is not observed by piezoelectric force microscopy, indicating an exception to the general tendency. It is concluded that in the case of samples showing larger amounts of the orthorhombic phase, extrinsic effects due to the tip radii effect can influence the evaluation of the amplitude of the piezoresponse.

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“…In addition, significant ferroelectric properties of HZO thin films can be achieved at relatively low processing temperatures due to the low crystallization temperature of ZrO 2 [12]. Hence the ferroelectric HZO thin film is a very promising material in a variety of device applications such as ferroelectric random-access memory (FeRAM) [13], ferroelectric field-effect transistors (FeFET) [14], ferroelectric tunnel junctions (FTJ) [15][16][17], negative capacitance fieldeffect transistors [18], electrostatic supercapacitors [19], sensors, and actuators [3,[20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Chen,

Jiang,

Chuang

et al. 2023

Nanotechnology

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In this study, platinum (Pt) and tungsten (W), two materials with dissimilar coefficients of thermal expansion (CTE) and work functions (WF), are used as the top electrode (TE) and the bottom electrode (BE) in metal/ferroelectric/metal (MFM) structures to explore the ferroelectricity of hafnium zirconium oxide (HZO) with a thickness less than 10 nm. The electrical measurements indicate that a higher CTE mismatch between HZO and TE/BE is beneficial for enhancing the ferroelectric properties of nanoscale HZO thin films. The different WFs of TE and BE generate a built-in electric field in the HZO layer, leading to shifts in the hysteresis loops and the capacitance–voltage characteristics. The structural characterizations reveal that the preferred formation of the orthorhombic phase in HZO is dominated by the W BE. The device in which W is used as the TE and BE (the W/HZO/W MFM structure) presents the optimal ferroelectric performance of a high remanent polarization (2P r = 55.2 μC cm−2). The presence of tungsten oxide (WO x ) at the W/HZO interfaces, as revealed by high-resolution transmission microscopy, is also responsible for the enhancement of ferroelectric properties. This study demonstrates the significant effects of different CTEs and WFs of TE and BE on the properties of ferroelectric HZO thin films.

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Nanoelectromechanical resonators for gigahertz frequency control based on hafnia–zirconia–alumina superlattices

Cited by 13 publications

References 54 publications

Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

Effects of Doping, Stress, and Thickness on the Piezoelectric Response and Its Relation with Polarization in Ferroelectric HfO₂

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

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Nanoelectromechanical resonators for gigahertz frequency control based on hafnia–zirconia–alumina superlattices

Cited by 13 publications

References 54 publications

Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

Effects of Doping, Stress, and Thickness on the Piezoelectric Response and Its Relation with Polarization in Ferroelectric HfO2

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

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Effects of Doping, Stress, and Thickness on the Piezoelectric Response and Its Relation with Polarization in Ferroelectric HfO₂