Nanoelectromechanical Memory Switch based Ternary Content-Addressable Memory

Cho, Mannhee; Kim, Young‐Min

doi:10.1109/isocc50952.2020.9332924

Cited by 2 publications

(4 citation statements)

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“…They operate in the same manner as SRAMs in the write and read modes. For example, to store a '1' in a memory cell, a '1' Data (memory) More recently, the possibility of a TCAM cell using a single NEM device has been proposed in [22]. Applications of NEM-based TCAM arrays are proposed, and devices and model-based operations are validated in [23,24].…”

Section: Related Workmentioning

confidence: 99%

“…For example, to store a '1' in a memory cell, a '1' In this study, three-dimensional integrated nanoelectromechanical (NEM) memory switches, which are driven by an electromechanical principle, are used in place of conventional CMOS transistors to overcome the limitations of CMOS-based CAMs and increase the density of the front-end area [25][26][27]. This work is an extension of [22], and is proposing a new CAM architecture with an advanced precharge circuit to improve stability in practical operation for both BCAM and TCAM by using a single NEM cell. In order to validate the performance of the proposed CAM array as a practical memory system, the proposed cell is extended to 10 rows of 10-bit array.…”

Section: Related Workmentioning

confidence: 99%

“…More recently, the possibility of a TCAM cell using a single NEM device has been proposed in [22]. Applications of NEM-based TCAM arrays are proposed, and devices and model-based operations are validated in [23,24].…”

Section: Introductionmentioning

confidence: 99%

“…Applications of NEM-based TCAM arrays are proposed, and devices and model-based operations are validated in [23,24]. In [23], a compact TCAM cell by removing More recently, the possibility of a TCAM cell using a single NEM device has been proposed in [22]. Applications of NEM-based TCAM arrays are proposed, and devices and model-based operations are validated in [23,24].…”

Section: Introductionmentioning

confidence: 99%

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Content-Addressable Memory System Using a Nanoelectromechanical Memory Switch

et al. 2022

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Content-addressable memory (CAM) performs a parallel search operation by comparing the search data with all content stored in memory during a single cycle, instead of finding the data using an address. Conventional CAM designs use a dynamic CMOS architecture for high matching speed and high density; however, such implementations require the use of system clocks, and thus, suffer from timing violations and design limitations, such as charge sharing. In this paper, we propose a static-based architecture for a low-power, high-speed binary CAM (BCAM) and ternary CAM (TCAM), using a nanoelectromechanical (NEM) memory switch for nonvolatile data storage. We designed the proposed CAM architectures on a 65 nm process node with a 1.2 V operating voltage. The results of the layout simulation show that the proposed design has up to 23% less propagation delay, three times less matching power, and 9.4 times less area than a conventional design.

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Section: Related Workmentioning

confidence: 99%