Nanocystalline silicon solar cells

Rath, J.K.

doi:10.1007/s00339-008-5017-x

Cited by 7 publications

(1 citation statement)

References 32 publications

(50 reference statements)

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“…7,8 Unfortunately, some of the most common lightweight flexible substrates (PET, PEN) are not compatible with temperatures above 200 C. Thus, there is a need to develop PECVD deposition methods that produce high quality films at temperatures below 200…”

Section: Introductionmentioning

confidence: 99%

Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

Śliz

Ahnood

Nathan

et al. 2012

Photonics for Solar Energy Systems IV

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Microcrystalline silicon (mc-Si) films deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-film devices, such as solar cells or thin-film transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (∼ 300• C) does not lend itself to electronic devices with flexible form factors fabricated on low-cost plastic substrates. In this study, we first investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (150• C) by characterising the properties of the film and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with film properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall efficiency of mc-Si flexible solar cells.

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Section: Introductionmentioning

confidence: 99%