1997
DOI: 10.1088/0268-1242/12/10/021
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Nanocrystals of CdSe in thin film matrix

Abstract: Nanocrystals of CdSe have been produced in an SiO x thin film matrix by thermal vacuum evaporation of SiO and CdSe. A new way of forming CdSe nanoclusters in the matrix has been used. The average size of the CdSe nanocrystals, between 2.4 nm and 6.0 nm, has been estimated from the (110) maximum in the x-ray diffraction spectra. Quantum size increase of the optical bandgap of the CdSe nanocrystals has been observed. A good coincidence between the average size of the nanocrystals calculated from the observed ban… Show more

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Cited by 26 publications
(31 citation statements)
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References 23 publications
(24 reference statements)
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“…The film thickness and deposition rate of both materials were controlled during deposition by two preliminary calibrated quartz monitors MIKI-FFV, whose quartz crystal heads were fixed above the respective source. In order to ensure the same composition of the SiO x matrix (x Ϸ 1.5 [10]) in all samples, the deposition rate of SiO x was kept constant (ϳ3.5 nm/s). The SiO x films were produced in a one-step procedure while the CdSe ones were deposited in a step-by-step manner.…”
Section: Methodsmentioning
confidence: 99%
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“…The film thickness and deposition rate of both materials were controlled during deposition by two preliminary calibrated quartz monitors MIKI-FFV, whose quartz crystal heads were fixed above the respective source. In order to ensure the same composition of the SiO x matrix (x Ϸ 1.5 [10]) in all samples, the deposition rate of SiO x was kept constant (ϳ3.5 nm/s). The SiO x films were produced in a one-step procedure while the CdSe ones were deposited in a step-by-step manner.…”
Section: Methodsmentioning
confidence: 99%
“…Some as-prepared films were annealed in air at 670 K for 80 min. The X-ray diffraction studies performed have shown [10] that CdSe nanocrystals of hexagonal wurtzite structure were formed after annealing.…”
Section: Methodsmentioning
confidence: 99%
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