2009
DOI: 10.1016/j.tsf.2009.07.201
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Nanocrystalline SnO2 and In2O3 as materials for gas sensors: The relationship between microstructure and oxygen chemisorption

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Cited by 48 publications
(30 citation statements)
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“…It was found that the interaction of the nanorods with molecular oxygen is not reversible, because of the oxidation of vanadium(IV) at the nanorod surface; we have previously observed the same process for vanadium oxide nanotubes 4. Above 150 °C the resistance of the material raises quickly and reaches a plateau 27,28. The decrease of the oxygen concentration was detected at a permanent flow chromatographically and the resistance of the sample reached a plateau.…”
Section: Resultsmentioning
confidence: 66%
“…It was found that the interaction of the nanorods with molecular oxygen is not reversible, because of the oxidation of vanadium(IV) at the nanorod surface; we have previously observed the same process for vanadium oxide nanotubes 4. Above 150 °C the resistance of the material raises quickly and reaches a plateau 27,28. The decrease of the oxygen concentration was detected at a permanent flow chromatographically and the resistance of the sample reached a plateau.…”
Section: Resultsmentioning
confidence: 66%
“…From the conductance dependence on O 2 partial pressure the predominant type of ionosorbed oxygen was estimated. To perform it, the data were treated using the ionosorption model developed in [36,37]. According to this, the ionosorption can be considered as the gas molecule interaction with charge carriers at the semiconductor surface: β2O2,gas+αe=Oβ,surfα…”
Section: Resultsmentioning
confidence: 99%
“…Applying complicated expressions for surface coverage to two model approximations, the conductance should be linearly dependent on oxygen partial pressure in logarithmic coordinates [37] (i) for small crystallites: lgσlgfalse(1σ/σ0)=constmlg pfalse(O2false) (ii) for large crystallites: lgσ12lg{lnfalse(σ/σ0)}=constmlg pfalse(O2false) where σ is conductance in presence of oxygen and σ 0 is conductance in Ar in absence of oxygen. The approximation (i) is applied to fully depleted semiconductor particles with radius less than Debye length, while the case (ii) refers to large enough particles with size larger than Debye length and, hence, with the separation between depleted surface and not depleted bulk regions.…”
Section: Resultsmentioning
confidence: 99%
“…Several references deal with the calculation of activation energy on oxidic materials of the active layer (tin oxide, titanium dioxide, indium sesquioxide with catalysts). (10)(11)(12) To the best of our knowledge, no estimation of activation energy for layers based on acetylacetonates has been published to date. In this manuscript, the activation energy was computed by solving the model of the first-order reaction according to ref.…”
Section: Methodsmentioning
confidence: 99%