Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

Kole, Arindam; Chaudhuri, Phalguni

doi:10.1016/j.tsf.2012.02.078

Cited by 28 publications

(22 citation statements)

References 21 publications

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“…We have earlier observed a uniform distribution of nc-Si of sizes comparable to silicon quantum dots within thin layers of lc-SiC:H samples deposited under the same conditions as the HPL. 15 With the size restriction in a direction perpendicular to the HPL layers of 5 nm thickness, a quantum confinement effect is further imposed on the electrons and holes within the nc-Si clusters embedded within the HPL layers. This periodic structure of HPL separated by LPL is therefore comparable with the silicon quantum dots superlattices.…”

Section: Discussionmentioning

confidence: 99%

“…14,15,21 In this study, the lc-SiC:H multilayer samples designated by #SiC-MLx where x denotes the sample number were deposited in a rf (13.56 MHz) PECVD system from a mixture of SiH 4 and CH 4 in 1:1 ratio diluted by 98.4 vol. % of Ar at a temperature of 200 C and pressure of 26.6 P. The successive lc-SiC:H layers were prepared by toggling the rf power level between 80 mW/cm 3 for high power layer (HPL) and 40 mW/cm 3 for the low power layer (LPL).…”

Section: A Preparation Of #Sic-ml Multilayersmentioning

confidence: 99%

“…Advantage of the tunable intermediate band for enhancement of efficiency of solar cells has been predicted in the literature. 10 The layers of amorphous silicon carbide [11][12][13][14][15] with embedded silicon quantum dots or the multilayer structure with alternating layers of a-SiC and silicon quantum dots 16 deposited by plasma enhanced chemical vapour deposition (PECVD) method are particularly interesting because they may be easily integrated with the present day amorphous silicon solar cell technology. However, there are only a few reports in the literature on the study of the performance of the solar cells incorporating the silicon quantum dot embedded SiC layers deposited by PECVD method.…”

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confidence: 99%

“…20 In this paper, we have investigated the structural and photovoltaic properties of the multilayers comprising of our previously studied lc-SiC:H (Ref. 15) layers and designate these samples as silicon carbide multilayer (#SiC-ML). The individual lc-SiC:H layers applied have identical optical band gap of 2.2 eV but differ largely in their c-Si volume fraction within the a-SiC:H network.…”

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confidence: 99%

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Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Chaudhuri

Kole

Haider

2013

Journal of Applied Physics

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We have systematically studied a series of silicon carbide multilayer (#SiC) samples, each consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (lc-SiC:H) having identical band gap of 2.2 eV but different amount of crystalline silicon volume fraction. The thickness of the lc-SiC:H layer deposited at higher power (termed as HPL) with higher degree of crystallinity was kept fixed at a value of 5 nm, while the thickness of the other lc-SiC:H layer deposited at a lower power (termed as LPL) was changed from 13 nm to 2 nm for the different samples of the series. With lowering of the LPL thickness, a decrease in the void fraction together with an improvement in the short range order within the multilayered samples was observed. By decreasing the thickness of the LPL layer up to 2 nm, the photoluminescence study indicates the formation of an intermediate band within the superlattice of lc-SiC:H. Photovoltaic properties of this superlattice layer were investigated in a p-i-n diode structure. V C 2013 American Institute of Physics. [http://dx.

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Section: Discussionmentioning

confidence: 99%

Section: A Preparation Of #Sic-ml Multilayersmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Chaudhuri

Kole

Haider

2013

Journal of Applied Physics

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“…The band around 2085 cm -1 could be assigned to SiH n (n=1,2,3) and/ or C-SiH stretching vibration mode [6]. The band extending from 500 to 1200 cm -1 could be ascribed to superposition of the following four absorption components: SiH n (n=1,2,3) rocking and wagging mode near 655 cm -1 [7], Si-C non-hydrogen rocking and/ or wagging mode or Si-CH 3 stretching vibration mode near 780 cm -1 [8], SiH 2 bending vibration mode at 800-900 cm -1 [9], CH n (n=1,2,3) wagging or bending vibration mode near 1000 cm -1 [10]. Fig.…”

Section: Methodsmentioning

confidence: 96%

Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition

Yang¹,

Wen²,

Luo³

et al. 2016

Proceedings of the 2015 4th International Conference on Sustainable Energy and Environmental Engineering

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： Hydrogenated amorphous silicon carbide thin films (a-SiC: H) were deposited by decomposition of SiH 4 and CH 4 gas mixtures at 200 0 C. Chemical bonding configuration measurements by Fourier transform infrared absorption spectroscopy show that there are SiH n (n=1,2,3), C-SiH, non-hydrogen Si-C, Si-CH 3 , and CH n (n=1,2,3) radicals in the as-grown sample. Raman scattering measurement reveals a broad peak located at about 479.4 cm -1 and a weak protuberance at 970.6 cm -1 . These demonstrate that there aren't any crystalline nanoparticles and the sample is in amorphous feature.

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Investigation of Silicon Quantum Dots Embedded in Boron‐Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution

Liu

Zhang

2017

Physica Status Solidi (a)

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In situ deposition method is adopted for preparing boron‐doped silicon oxide thin film containing silicon quantum dot at the relative low substrate temperature of 200 °C. Argon dilution is applied in the deposition process, and various characterizations have been carried out for systematically investigating the effect of Ar flow on the structural, electrical, and optical properties of the samples. It is found that there is a phase transition from amorphous phase to crystalline phase as the Ar flow increases to 100 sccm. XPS results reveal that the O/Si atomic ratio declines with the increasing Ar flow whereas the B/Si atomic ratio shows an opposite varying tendency. By introducing moderate Ar flow, the B‐doping efficiency is improved due to the crystallization and the enhanced dissociation of B2H6. The maximum values of dark conductivity (1.64 S cm−1) and carrier concentration (2.6 × 1019 cm−3) were obtained at the Ar flow of 100 sccm. Furthermore, detailed discussion has been made to analyze the influence of Ar dilution on the properties of the B‐doped SiOx thin films.

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Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

Cited by 28 publications

References 21 publications

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition

Investigation of Silicon Quantum Dots Embedded in Boron‐Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution

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