Nanocrystalline <i>p</i>-type transparent Cu–Al–O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors

Gong, Hao; Wang, Yue; Luo, Yi

doi:10.1063/1.126834

Cited by 130 publications

(66 citation statements)

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“…Similar growth has been observed in nanocrystalline CuAlO 2 . 21 The d spacing observed do not match with that of Ag 2 O or ␤-AgGaO 2 . Energy dispersive x-ray analysis shows that the ratio of Ag/ Ga is 1.02, which is close to the atomic ratio of ␣-AgGaO 2 .…”

mentioning

confidence: 86%

p -type electrical conduction in α-AgGaO2 delafossite thin films

Vanaja

Ajimsha

Asha

et al. 2006

Applied Physics Letters

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Thin films of delafossites of ␣-AgGaO 2 were prepared on ␣-Al 2 O 3 ͑0001͒ and on Si ͑100͒ single crystal substrates by pulsed laser deposition. The films have a band gap of 4.12 eV and a transparency of more than 50% in the visible region. The electrical conductivity at 300 K was 3.2ϫ 10 −4 S cm −1 . The positive sign of Seebeck coefficient ͑+70 V K −1 ͒ demonstrated the p-type conduction in the films. Transparent p-n heterojunctions on a glass substrate having a structure glass/ITO/ n-ZnO / p-AgGaO 2 were fabricated. The ratio of forward to reverse current was more than 100 in the range of −2 to + 2 V.

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confidence: 86%

p -type electrical conduction in α-AgGaO2 delafossite thin films

Vanaja

Ajimsha

Asha

et al. 2006

Applied Physics Letters

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“…The conductivity is highly anisotropic due to its structure 12 . CAO thin films are generally prepared by pulsed laser deposition (PLD) 2 , spray pyrolysis 13 , chemical vapour deposition 14 , sputtering [15][16][17][18] . TCO thin films for optoelectronics devices such as transparent solar cells and flat panel displays are commercially deposited using RF sputtering because of its capability of producing high purity thin films at lower temperatures.…”

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confidence: 99%

Rapid synthesis and electrical transition in p-type delafossite CuAlO₂

2014

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Highly polycrystalline and pure delafossite phase CuAlO 2 powder has been synthesised within a short annealing period, shorter than most conventional processes. This is an improvement over the conventional synthesis procedures. Conventional synthesis procedure has seen CuAlO 2 only formed at high annealing temperatures ≥ 1100°C over long annealing time, some as long as 96 hours. In the current process, a pure phase devoid of impurities has been obtained at reduced calcination time of 1.5 hours in an argon atmosphere at a temperature of 1150°C. This was confirmed by XRD and SEM/EDX. High temperature DC/AC electrical measurements show a change in conduction mechanism from mixed conductivity (ionic + p-type) in the temperature range of 375 ≥ T ≥ 25°C to intrinsic type behavior above 375°C. The activation energies for these two regimes are 0.27 eV and 0.08 eV respectively. This change from mixed to DC conductivity is confirmed by spectral analysis too. Spectral analysis using the power law also revealed that conduction is of long range hopping. Use of platinum as a contact electrode at elevated temperatures has a detrimental effect on the electrical properties since it encourages the formation of CuAl 2 O 4 at the interface due to the formation of more stable Cu−Pt alloy by virtue of the chemical reaction Pt + 2CuAlO 2 − → CuAl 2 O 4 + Pt Cu .

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“…Several CuMO 2 thin films have been reported with different conductivities and transparencies [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Ac conductivity and dielectric properties of CuFe_1−xCr_xO₂ : Mg delafossite

Lalanne¹,

Demont²,

Barnabé³

2011

J. Phys. D: Appl. Phys.

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To cite this version:M Lalanne, P Demont, A Barnabé. Ac conductivity and dielectric properties of CuFe1xCrxO2:Mg delafossite. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (18) AbstractThe electrical and dielectric properties of CuFe 1-x Cr x O 2 (0 x 1) powders, doped with 3 % of Mg and prepared by solid-sate reaction, were studied by broadband dielectric spectroscopy in the temperature range from -100 to 150°C. The frequency-dependent electrical and dielectric data have been discussed in the framework of a power law conductivity and complex impedance and dielectric modulus. At room temperature, the ac conductivity behaviour is characteristic of the charge transport

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Nanocrystalline p-type transparent Cu–Al–O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors

Cited by 130 publications

References 13 publications

p -type electrical conduction in α-AgGaO2 delafossite thin films

p -type electrical conduction in α-AgGaO2 delafossite thin films

Rapid synthesis and electrical transition in p-type delafossite CuAlO₂

Ac conductivity and dielectric properties of CuFe_1−xCr_xO₂ : Mg delafossite

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Nanocrystalline p-type transparent Cu–Al–O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors

Cited by 130 publications

References 13 publications

p -type electrical conduction in α-AgGaO2 delafossite thin films

p -type electrical conduction in α-AgGaO2 delafossite thin films

Rapid synthesis and electrical transition in p-type delafossite CuAlO2

Ac conductivity and dielectric properties of CuFe1−xCrxO2 : Mg delafossite

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Product

Resources

About

Rapid synthesis and electrical transition in p-type delafossite CuAlO₂

Ac conductivity and dielectric properties of CuFe_1−xCr_xO₂ : Mg delafossite