Nanobeam photonic bandedge lasers

Abstract

We demonstrate one-dimensional nanobeam photonic bandedge lasers with InGaAsP quantum wells at room temperature from the lowest dielectric band of photonic crystal nanobeam waveguides. The incident optical power at threshold is 0.6 mW (effectively ~18 μW). To confirm the lasing from the dielectric bandedge, the polarization and the photoluminescent spectra are taken from nanobeams of varying lattice constants. The observed shift of the lasing wavelength agrees well with the computational prediction.

Low-voltage-tunable nanobeam lasers immersed in liquid crystals

“…The dielectric band edge mode with the lowest frequency is used, as shown in Fig. 1(b) owing to the good spatial overlap between the dielectric mode and the active gain medium [25]. Our horizontal planar geometry enables control of the electrode gap size to a range of less than 100 nm.…”

“…Here, we assume that the resonant wavelength of the nanobeam cavity is 1,550 nm and that the LC orientation in the zero-electric field is completely vertical (z direction). An InGaAsP nanobeam with three layers of quantum wells in the middle of a slab is patterned by means of electron beam lithography [25]. The InP sacrificial layer is removed using diluted HCl solution to create freestanding structures, as shown in Fig.…”

Whispering Gallery Modes Formation in Small Nanocavities Based upon Crossed Nanobeam Structures

“…It is also possible to have NCs included in the middle of the structure, for example by modifying central part of a the narrow photonic wire or NBs with sets of perfectly periodic or tapered air-holes [4,6,7,[18][19][20]. Also, in this paper, conditions for formation of whispering gallery modes in the small nanocavities are investigated.…”

Suspended GaN-based band-edge type photonic crystal nanobeam cavities

“…The small mode volume (V) with a high quality (Q) factor can be observed in such kind of PC nanocavities [10,11]. In recent years, PC nanobeam cavities, with further scaling the device footprints down but also maintaining the high Q factors, have attracted much attention and intensively researched [12][13][14][15][16][17][18]. Up to now, several reports of PC nanobeam cavities have been addressed such as PC nanobeam lasers with an ultralow threshold condition [15], observation of cavity quantum electrodynamics [16], optical switching devices [17] and photonic integrated circuits [18].…”

“…Usually, PC nanobeam cavities with suspended structures were realized in GaAs or InPbased material systems using selectively chemical etching [12][13][14][15][16][17][18]. In recent years, GaN and its ternary and quaternary alloys are very popular material system for novel optoelectronics due to their large exciton binding energy (~26 meV) and wide range spectra tuning capability at the ultraviolet-visible region, which are attractive in the single photon emission [19] and strong coupling effect to tailor the exciton-polariton emission at room temperature [20] as well as the luminescence based bio-sensing application at the ultraviolet-visible region [21].…”