“…ZnO is a promising candidate for optoelectronics and piezoelectric applications due to its wide band gap (3.37 eV), a large exciton binding energy (60 meV) at room temperature and its non-centro-symmetry in the wurtzite structure [2]. ZnO can be grown richest variety of nanostructures [3] and is expected to be the next most important material for a variety of practical applications such as TCOs [4], photodetectors [5], UV-laser [6], gas sensors [7,8], buffer layers in CIS solar cells [9], n-type window layer in extremely thin absorber (ETA) solar cells [10], and as an electrode in DSSCs [11,12]. Until today, there has been a prevailing need for efficient, low temperature and lowcost deposition methods for thin films as technological industrial applications.…”