Nano-size crystallites in Mo/Si multilayer optics

Kruijs, R. W. E. van de; Zoethout, E.; Yakshin, Andrey; Nedelcu, Ileana; Louis, Eric; Enkisch, H.; Sipos, Gellért; Müllender, S.; Bijkerk, Frederik

doi:10.1016/j.tsf.2005.12.252

Cited by 30 publications

(29 citation statements)

References 10 publications

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“…18,51 An amorphous Si layer might intermix easier with Ru ad-atoms, than for Si ad-atoms to interact with a crystalline Ru layer since a disordered matrix has more mobility of its atoms than an ordered structure where the atoms are strongly bounded within the "rigid" lattice. As a result, Ru could intermix more on top of Si than Si on top of Ru.…”

Section: Surface Coverages Closed Layer Determination and In-deptmentioning

confidence: 99%

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Ribera

Kruijs

Sturm

et al. 2016

Journal of Applied Physics

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In vacuo high-sensitivity low energy ion scattering (HS-LEIS) has been used to investigate the initial growth stages of DC sputtered Ru on top of Si, SiN and SiO2. The high surface sensitivity of this technique allowed an accurate determination of surface coverages and thicknesses required for closing the Ru layer on all three substrates. The Ru layer closes (100% Ru surface signal) at about 2.0, 3.2 and 4.7 nm on top of SiO2, SiN and Si, respectively. In-depth Ru concentration profiles can be reconstructed from the Ru surface coverages when considering an error function like model. The large intermixing (4.7 nm) for the Ru-on-Si system is compared to the reverse system (Si-on-Ru), where only 0.9 nm intermixing occurs. The difference is predominantly explained by the strong Si surface segregation that is observed for Ru-on-Si. This surface segregation effect is also observed for Ru-on-SiN, but is absent for Ruon-SiO2. For this last system, in vacuo HS-LEIS analysis revealed surface oxygen directly after deposition, which suggests an oxygen surface segregation effect for Ru-on-SiO2. In vacuo XPS measurements confirmed this hypothesis based on the reaction of Ru with oxygen from the SiO2, followed by oxygen surface segregation.

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Section: Surface Coverages Closed Layer Determination and In-deptmentioning

confidence: 99%

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Ribera

Kruijs

Sturm

et al. 2016

Journal of Applied Physics

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“…After each exposure the crystallinity and the period of the multilayer were determined by WAXRD and GIXR respectively, at a wavelength of 0.15406 nm; the measurement geometries which were used are exactly the same as the ones discussed in ref [29,30]. From the GIXR spectra, the period of the multilayer at each annealing step was determined by fitting the Bragg peak positions with the modified Bragg law [31].…”

Section: Thermal Annealingmentioning

confidence: 99%

Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources

Sobierajski¹,

Bruijn²,

Khorsand³

et al. 2010

Opt. Express

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Abstract:We investigated the damage mechanism of MoN/SiN multilayer XUV optics under two extreme conditions: thermal annealing and irradiation with single shot intense XUV pulses from the free-electron laser facility in Hamburg -FLASH. The damage was studied "post-mortem" by means of X-ray diffraction, interference-polarizing optical microscopy, atomic force microscopy, and scanning transmission electron microscopy. Although the timescale of the damage processes and the damage threshold temperatures were different (in the case of annealing it was the dissociation temperature of Mo 2 N and in the case of XUV irradiation it was the melting temperature of MoN) the main damage mechanism is very similar: molecular dissociation and the formation of N 2 , leading to bubbles inside the multilayer structure. E. van Dorssen, and H. A. Padmore, "Enhancement of reflectivity of multilayer mirrors for soft X-ray projection lithography by temperature optimization and ion bombardment," Microelectron. Eng. ©2010 Optical Society of America

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“…It is already known from literature that amorphous Si layers are formed during deposition, whereas the Mo layer crystallizes above a critical thickness of about 2 nm [3,4]. For crystalline Mo, it is also known that the formed Mo-on-Si interface is about 1 nm thick, while the formed Si-on-Mo interface is about 0.5 nm thick.…”

Section: Introductionmentioning

confidence: 98%

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

Bruijn

Kruijs

Yakshin

et al. 2009

DDF

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Abstract. Thermally induced diffusion through the Si-on-Mo interface of multilayers with either amorphous or polycrystalline Mo layers has been investigated using grazing incidence and wide angle x-ray reflectometry. Diffusion through the Mo-on-Si interface was reduced by applying a diffusion barrier, allowing us to probe the diffusion at the opposite, Si-on-Mo interface. We found that diffusion through this interface is much slower for polycrystalline Mo than for amorphous Mo layers. The reason for this difference might be the larger defect concentration in amorphous Mo as compared to crystalline Mo.

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Nano-size crystallites in Mo/Si multilayer optics

Cited by 30 publications

References 10 publications

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

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