“…Among them, Raman spectroscopy has the advantages such as high sensitive to local strain, submicron spatial resolution, nondestructive measurements, fast measurements, and ease of use. Consequently, Raman spectroscopy has been frequently used by many researchers to measure the strain in Si [3,[7][8][9][17][18][19][20][21]. However, conventional Raman spectroscopy fails to measure the complicated stress states in Si.…”