2007
DOI: 10.1063/1.2732435
|View full text |Cite
|
Sign up to set email alerts
|

Nano-Raman spectroscopy with metallized atomic force microscopy tips on strained silicon structures

Abstract: In this paper, intensity enhancements of the Raman signal from strained silicon films utilizing the tip enhanced Raman spectroscopy (TERS) effect are reported. Specially shaped metallized atomic force microscopy tips have been prepared by sputter deposition of thin silver films onto sharpened quartz tips and subsequent focused ion beam (FIB) modification. Raman signal enhancements of more than 20%, which are attributed to the strained silicon film of 70nm thickness only, have been obtained due to approaching t… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
24
0

Year Published

2008
2008
2014
2014

Publication Types

Select...
5
2
2

Relationship

0
9

Authors

Journals

citations
Cited by 41 publications
(25 citation statements)
references
References 14 publications
1
24
0
Order By: Relevance
“…Among them, Raman spectroscopy has the advantages such as high sensitive to local strain, submicron spatial resolution, nondestructive measurements, fast measurements, and ease of use. Consequently, Raman spectroscopy has been frequently used by many researchers to measure the strain in Si [3,[7][8][9][17][18][19][20][21]. However, conventional Raman spectroscopy fails to measure the complicated stress states in Si.…”
Section: Introductionmentioning
confidence: 99%
“…Among them, Raman spectroscopy has the advantages such as high sensitive to local strain, submicron spatial resolution, nondestructive measurements, fast measurements, and ease of use. Consequently, Raman spectroscopy has been frequently used by many researchers to measure the strain in Si [3,[7][8][9][17][18][19][20][21]. However, conventional Raman spectroscopy fails to measure the complicated stress states in Si.…”
Section: Introductionmentioning
confidence: 99%
“…b. TERS will be used in semiconductor inspection. It may be used in inspections for stress distribution and fission process in nanometer scale (Zhu et al, 2007a(Zhu et al, , 2007bGeorgi et al, 2007). The polarization control techniques may be used to reduce the far-field background to improve the contrast (Lee et al, 2007).…”
Section: Discussionmentioning
confidence: 99%
“…After the initial phase the TERS experiments were quickly extended to nanoscale systems like the new materials of single-walled carbon nanotubes (SWNTs) with a resolution of 15 nm down to a separated single molecule [32][33][34][35][36][37][38][39], semiconducting thin films [40,41], insulators [42,43] and organic molecules [44][45][46].…”
Section: Back Reflection Modementioning
confidence: 99%