Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

Electron-beam exposure mechanisms in hydrogen silsesquioxane investigated by vibrational spectroscopy and in situ electron-beam-induced desorption

“…10 Isolated polymers will cross-link during thermal or radiation treatment which results in an increase in the ratio of Si-O to Si-H bonds. 11 To create a lithographic pattern, unexposed regions of HSQ are dissolved away in either aqueous base solutions 12 or a variety of organic solvents, 13 leaving a patterned film on the substrate.…”

Advances in Resist Materials and Processing Technology: Photonic Devices Fabricated by Direct Lithography of Resist/Colloidal Nanocrystals Blend

“…In order to verify the possibility to localize single nanocrystals by means of electron beam lithography, a dielectric structure, consisting of a SiO 2 /TiO 2 -based distributed Bragg reflector (DBR) and an additional SiO 2 spacing layer, has been preliminary fabricated. A very low concentration of CdSe/ZnS colloidal nanocrystals emitting at = 610 nm has been dispersed in a high-resolution electron-beam resist, namely Hydrogen Silsesquioxane (HSQ) (Namatsu et al, 1998). A 90 nm thick layer of the blend has been spin-coated on the dielectric structure and subsequently exposed to the electron beam to define an array of active pillars with diameters ranging from 500 nm down to 30 nm.…”

Three dimensional HSQ structures formed using multiple low energy electron beam lithography

“…negative tone electron beam resist [4]. It is has been since shown to be a highly successful electron beam resist, capable of producing very high resolution patterns [5], with low line edge roughness [4].…”

“…It is has been since shown to be a highly successful electron beam resist, capable of producing very high resolution patterns [5], with low line edge roughness [4]. The structure of the exposed material is similar to silicon dioxide and thus it has a high dry etch resistance and is mechanically stable.…”