Abstract:The HfO X thin film was deposited what it has been paid attention to the next generation oxide thin layer of MOSFET (metal-Oxide semiconductor field-effect-transistor) by rf magnetron sputter on Si (100) substrate. The HfOx thin film was deposited using a various oxygen gas flows (5, 10, 15 sccm). After deposition, HfO X thin films were annealed from 400 to 800 o C for 20 min in nitrogen ambient. The electrical characteristics of the HfO X thin film was improved by leakage current properties, depending on the … Show more
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