2015
DOI: 10.1016/j.tsf.2015.05.023
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Nano-hardness estimation by means of Ar+ ion etching

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Cited by 10 publications
(3 citation statements)
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“…An Ar + ion gun with an energy of a few kiloelectronvolts can be used to etch thin layers of films by a sputtering approach. 410 In this regard, two points should be considered. First, the input energy should be carefully controlled, since, if the sputtering energy is sufficiently high, the PCN films would easily be carbonized.…”
Section: Synthesis Of Single-layered Polymeric Carbonmentioning
confidence: 99%
See 1 more Smart Citation
“…An Ar + ion gun with an energy of a few kiloelectronvolts can be used to etch thin layers of films by a sputtering approach. 410 In this regard, two points should be considered. First, the input energy should be carefully controlled, since, if the sputtering energy is sufficiently high, the PCN films would easily be carbonized.…”
Section: Synthesis Of Single-layered Polymeric Carbonmentioning
confidence: 99%
“…Note that the XPS depth profile can be used to characterize the entire film from bottom to top. An Ar + ion gun with an energy of a few kiloelectronvolts can be used to etch thin layers of films by a sputtering approach . In this regard, two points should be considered.…”
Section: Photoanodic Oxygen Evolution Reactionmentioning
confidence: 99%
“…It has been recognized already in the 1990's that DLC is also suitable as etch masks for integrated circuit fabrication already 39 , yet its use as hardmask has not proliferated. The low argon ion sputtering yield 40 and excellent chemical stability of DLC are much desired for the etching of all integrated optical materials etching such as LiNbO 3 , SiO 2 , BaTiO 3 , Si, and Si 3 N 4 as they limit mask erosion processes that determine surface roughness and lead to slanted waveguide sidewall angles.…”
Section: Resultsmentioning
confidence: 99%