Nano-dots formation on silver sulphide surface using electron beam irradiation

Sone, Hayato; Tamura, Tomoyuki; Miyazaki, Ken; Hosaka, Sumio

doi:10.1016/j.mee.2006.01.088

Cited by 11 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure (a) shows the growth of Ag nanowires on an Ag 2 S crystal by electron beam irradiation, as a result of observation using a scanning electron microscope (SEM). Ag nanodots can be formed in a patterned structure by controlling the position and irradiation time of the electron beam 12. The smallest dot size (diameter) of 25 nm was achieved in an experiment that corresponded to an ultrahigh density of about 600 Gb/in 2 in a storage device with a dot pitch of 30 nm.…”

Section: Gap‐type Atomic Switchmentioning

confidence: 99%

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers

et al. 2011

View full text Add to dashboard Cite

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers.

show abstract

Section: Gap‐type Atomic Switchmentioning

confidence: 99%

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers

et al. 2011

View full text Add to dashboard Cite

show abstract

“…9 For instance, electron injection into an Ag 2 S crystal causes a reduction of Ag + ions to Ag atoms, which precipitate at the surface of the Ag 2 S crystal to form Ag nanowires and nanodots. 10 Figure 1a shows such Ag nanowire growth captured by scanning electron microscopy. The extraction of electrons from the material causes reionization of the precipitated metal atoms to dissolve into the material.…”

Section: Background To the Invention Of An Atomic Switchmentioning

confidence: 99%

Nanoionics Switching Devices: “Atomic Switches”

Hasegawa¹,

Terabe²,

Sakamoto³

et al. 2009

MRS Bull.

View full text Add to dashboard Cite

Novel nanoionics devices, atomic switches, have been developed using a solidelectrochemical reaction to control the formation and annihilation of the metal filament between two electrodes. The switching operation can be achieved simply by the application of a bias voltage to precipitate metal atoms in a nanogap between the two electrodes or to dissolve them onto one of the electrodes. The small size of atomic switches enables rapid switching even though atomic motion is required. They also have several novel characteristics in that they are nonvolatile, consume less power, and have a simple structure and a low on-resistance. Logic gates and 1 kbit nonvolatile memory chips have been developed using atomic switches in order to demonstrate the possibilities for improving present-day electronic devices. Their characteristics also enable the fabrication of new types of electronic devices, such as high-performance programmable logic devices that may achieve a multitude of functions on a single chip. future by exploiting the fact that few metal atoms are sufficient to make a conductive path. In the remainder of this article, atomic switches are reviewed by introducing the background to their invention, the operating mechanism with its basic characteristics, the development of various kinds of atomic switches, and future applications.

show abstract

“…An Ag nano-protrusion was formed on the Ag2S surface by a solid electrochemical reaction due to a tunneling current between two electrodes with approximately 1 nm gap [5]. Based on these principles, authors [6] had an idea to form nano-dots on silver wire covered with sulfur, using EB induced surface charge.…”

Section: Introductionmentioning

confidence: 99%