N2 doped SiO2–SiON planar waveguides deposited by PECVD method

Study of the mechanical and structural properties of silicon oxynitride films for optical applications

“…The SiO x N y films production is compatible with current microelectronics manufacture technology, allowing the integration of optical and electronic devices in the same chip, what is an advantage over previous technologies, based on LiNbO 3 , or III-V materials as GaAs and InP [5,6]. Currently, much effort has been directed to fabricate SiO x N y films with the plasma enhanced chemical vapor deposition technique (PECVD) [2,[6][7][8] at low deposition temperatures (300-400°C) since this technique permits an accurate control of the atomic concentrations, refractive index, thickness and roughness of the deposited material only by the appropriate choice of the deposition parameters [4,6].…”

“…Currently, much effort has been directed to fabricate SiO x N y films with the plasma enhanced chemical vapor deposition technique (PECVD) [2,[6][7][8] at low deposition temperatures (300-400°C) since this technique permits an accurate control of the atomic concentrations, refractive index, thickness and roughness of the deposited material only by the appropriate choice of the deposition parameters [4,6].…”

Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

“…Oxynitride thin films are used in important applications such as protective layers and insulators for optical devices such as low-pass and high-pass band pass filters and optical communication waveguides [1][2][3][4] and for gate dielectrics. Their traditional deposition processes have several drawbacks: high temperatures are needed, they induce high mechanical stresses and have a low deposition rate [5].…”

Asymmetrical single-mode silica waveguide deposited by PECVD

“…Many different kinds of fabrication technologies have been developed for optical waveguides on silicon substrates, including plasma enhanced chemical vapor deposition (PECVD) [5,6] and flame hydrolysis deposition (FHD) [7,8]. Most of the published works which refer to waveguide structures are based on depositing pure silica (SiO 2 ) for the buffer layer and doped silica, silicon oxynitride (SiON) and silicon nitride (SiN) for the core layer, respectively [9][10][11][12].…”

“…To measure mode images, the light intensity scattered out of the waveguide plane, which is proportional to the guided intensity, was recorded by a video camera. It is well known that silane radicals react preferentially with oxygen radicals rather than with nitrogen radicals because the electronegativity of oxygen is greater than that of nitrogen [5]. Therefore, Si-H, Si-NH and Si-OH bonds are formed in the solid phase only when all the oxygen radicals have been consumed in the reaction.…”