n-ZnO nanorods/p-CuSCN heterojunction light-emitting diodes fabricated by electrochemical method

Zhang, Qiaobao; Guo, Honghui; Feng, Zhihai; Lin, Lingling; Zhou, Jian-Zhang; Lin, Zhenxu

doi:10.1016/j.electacta.2010.03.082

Cited by 43 publications

(31 citation statements)

References 37 publications

(56 reference statements)

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“…3 air-annealed ZnO is at least two orders of magnitude greater than those previously reported for ZnO/CuSCN diodes. 61,62 The increased leakage current for oxygen/nitrogen-annealed ZnO is attributed to the surface defects formed during the anneal process; these act as recombination sites or trap states at the ZnO/CuSCN interface.…”

Section: Zno-cuscn Device Behaviourmentioning

confidence: 99%

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

Hatch

Briscoe

Sapelkin

et al. 2013

Journal of Applied Physics

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High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector Appl. Phys. Lett. 101, 261108 (2012) ZnO nanorods synthesised using an aqueous pH 11 solution are shown to exhibit surface-sensitive morphology post-annealing in oxygen, air, and nitrogen as shown by scanning electron microscopy and transmission electron microscopy analysis. Raman analysis confirms the nanorods were nitrogen-doped and that nitrogen incorporation takes place during the synthesis procedure in the form of N-H x . A strong green photoluminescence is observed post-annealing for all samples, the intensity of which is dependent on the atmosphere of anneal. This luminescence is linked to zinc vacancies as recent reports have indicated that these defects are energetically favoured with the annealing conditions used herein. ZnO-nanorod/CuSCN diodes are fabricated to examine the effect of material properties on photodetector device performance. The devices exhibit a photocurrent at zero bias, creating a self-powered photodetector. A photocurrent response of 30 lA (at 6 mW cm

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Section: Zno-cuscn Device Behaviourmentioning

confidence: 99%

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

Hatch

Briscoe

Sapelkin

et al. 2013

Journal of Applied Physics

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“…However, a more complicated pulsed deposition process was shown to significantly improve the device performance [55]. Other electronic devices that incorporate CuSCN into heterostructures include spray-deposited pn junction diodes [58], flexible hybrid diodes embedded into polymer matrices [59], solar cells with ZnO-nanorod arrays [60], and ZnO-nanorod based light-emitting diodes (LEDs) shown in figure 4 [61]. Enhanced emission is observed in the visible spectral region due to an increase in surface states and defects at the ZnO surface, which is induced by the electrochemical growth of the CuSCN layer.…”

Section: Applications Of Cuscnmentioning

confidence: 99%

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Wijeyasinghe

Anthopoulos

2015

Semicond. Sci. Technol.

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Recent advances in large-area optoelectronics research have demonstrated the tremendous potential of copper(I) thiocyanate (CuSCN) as a universal hole-transport interlayer material for numerous applications, including, transparent thin-film transistors, high-efficiency organic and hybrid organicinorganic photovoltaic cells, and organic light-emitting diodes (OLEDs). CuSCN combines intrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum. Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The merits of using CuSCN in numerous emerging applications as an alternative to conventional hole-transport materials are also discussed.

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“…Điều này làm cho hiệu suất lượng tử của vật liệu ZnO một chiều cao hơn so với vật liệu ZnO hai hay ba chiều. Vì vậy, thanh nano ZnO thường được dùng làm kênh dẫn điện tích ra điện cực và được ứng dụng trong pin mặt trời [4,5], LED [6,7], sensor khí [8,9]…”

Section: Mở đầUunclassified

Synthesis of ZnO nanorods on ZnO/ITO seed layer by electrochemical method and its application in solar cell device

Tran

Nguyen

et al. 2013

Sci. Tech. Dev. J.

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In this paper, we study on the effects of ZnO nanorods /seed ZnO on properties of hybrid solar cells. ZnO nanorods fabricated by electrochemical method of two-step stable flow of liquid Zn(NO3)2. 6H2O (0.005 M) and C6H12N4 (0.005 M). Morphology and optoelectronic properties of ZnO nanorods were studied by SEM images, UV-VIS transmission spectra, X-ray diffraction and photoluminescence spectrum. Elaboration of hybrid solar cells by inserting ZnO nanorods on organic photoactive layer of P3HT:PCBM and ITO, as result the solar cell conductivity performance is significantly improved. Experimental results show that ~ 1,392 mA/cm2 Jsc, Voc ~ 0.49 V, FF = 0.32, and PCE = 0.23%.

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n-ZnO nanorods/p-CuSCN heterojunction light-emitting diodes fabricated by electrochemical method

Cited by 43 publications

References 37 publications

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Synthesis of ZnO nanorods on ZnO/ITO seed layer by electrochemical method and its application in solar cell device

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