n-VO2/p-GaN based nitride–oxide heterostructure with various thickness of VO2 layer grown by MBE

Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Weifeng; Zhang, Yuzhi; Luo, Yi

doi:10.1016/j.apsusc.2016.07.109

Cited by 21 publications

(17 citation statements)

References 17 publications

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“…Also, it is worth noting that V 5+ ions are probed by XPS while there are no characteristic peaks of the V 2 O 5 phase in XRD patterns. Considering that XPS is a surfacesensitive technique and the XRD analysis reveals the lattice structure of the whole sample, the presence of V 5+ ions is believed to be derived from surface oxidation during storage and it exists only on the surface of samples as reported previously [24][25][26][27] . Figure 2 b further shows the close-up views of (011) peak for all the samples after fitting with Lorentzian function.…”

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 69%

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

et al. 2020

Nanoscale Res Lett

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Preparing the thermal-sensitive thin films with high temperature coefficient of resistance (TCR) and low resistivity by a highly compatible process is favorable for increasing the sensitivity of microbolometers with small pixels. Here, we report an effective and process-compatible approach for preparing V 1-x-y Ti x Ru y O 2 thermal-sensitive thin films with monoclinic structure, high TCR, and low resistivity through a reactive sputtering process followed by annealing in oxygen atmosphere at 400°C. X-ray photoelectron spectroscopy demonstrates that Ti 4+ and Ru 4+ ions are combined into VO 2. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy reveal that V 1-x-y Ti x Ru y O 2 thin films have a monoclinic lattice structure as undoped VO 2. But V 1-x-y Ti x Ru y O 2 thin films exhibit no-SMT feature from room temperature (RT) to 106°C due to the pinning effect of high-concentration Ti in monoclinic lattice. Moreover, RT resistivity of the V 0.8163 Ti 0.165 Ru 0.0187 O 2 thin film is only one-eighth of undoped VO 2 thin film, and its TCR is as high as 3.47%/°C.

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Section: High-concentration Ti Was Introduced Intomentioning

confidence: 69%

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

et al. 2020

Nanoscale Res Lett

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“…These devices can be a high-power transistor [16,17], optical device with a short wavelength [18], photo-detector [19], light emitting diode (LED) device [20][21][22], solar cell [23,24], pH sensor [25] and betavoltaic device [26]. Many thin film deposition techniques can be used to grow high-quality GaN thin films including pulsed laser deposition [27], metal-organic chemical vapour deposition [28], atomic layer deposition [29], molecular beam epitaxy (MBE) [30], thermionic vacuum arc [31,32], sputtering [33] and sol-gel [34]. Radio frequency (RF) magnetron sputtering has emerged as a useful method for producing high-quality GaN thin films at lower temperature [35].…”

Section: Introductionmentioning

confidence: 99%

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Mantarcı

Kundakçı

2019

Bull Mater Sci

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Gallium nitride (GaN) thin films were grown on the Al 2 O 3 (0001) substrate using radio frequency (RF) magnetron sputtering under various RF powers. Many experimental techniques were used for investigating the effects of RF power on the GaN thin film growth and its physical properties. The X-ray diffraction results confirmed that the GaN thin film had a polycrystalline structure with planes of (101) and (202). The structural parameters of the thin film changed with RF powers. It was also found that the optical band gap energy of GaN thin films varied with changing RF power. From the atomic force microscopy images, almost homogeneous, nanostructured and a low-rough surface of the GaN thin film can be observed. From scanning electron microscopy analysis, dislocations and agglomerations were observed in some regions of the surface of the GaN thin film. E 2 (high) optical phonon mode of GaN was observed, proving the hexagonal structure of the thin film. The residual stress in the GaN thin films was calculated from Raman measurements. Furthermore, an agreement between the experimental measurements was also examined. The morphological, structural and optical properties of the GaN thin film could be improved with altering RF power. These films could be used in devices such as light emitting diodes, solar cells and diode applications.

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“…Vanadium dioxide smart coatings are suitable for smart windows, sensors, electrical/optical switches, electrode materials in lithium ion batteries, photocatalytic activities, etc. These thin films have been prepared by several methods such as sol‐gel, excimer‐laser‐assisted metal organic deposition, atmospheric pressure chemical vapor deposition, solution‐based deposition, pulsed laser deposition, molecular beam epitaxy, etc.…”

Section: Introductionmentioning

confidence: 99%

Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method

Vostakola

Mirkazemi

Yekta

2019

Int J Applied Ceramic Tech

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Thermochromic VO2 thin films were deposited on soda‐lime glass via sol‐gel method. Doping was done through adding tungstic acid solution to the vanadium solution precursor. Grazing incidence x‐ray diffractometer (GIXRD) results showed that VO2 and V6O13 phases were formed together in the heat‐treated sample. According to the GIXRD result of the W‐doped sample, only VO2 remained. Field‐emission scanning electron microscopy (FESEM) micrographs showed that the VO2 grain size decreased from about 70 to about 25 nm for undoped film and 2 wt% W‐doped films, respectively. Atomic force microscopy (AFM) results showed that the root mean square roughness for the film with 180 nm thickness was about 18 nm, and 2 wt% W‐doped film had a smoother surface. Diffuse reflectance spectroscopy (DRS) results showed that the band gap energy for undoped, 1 wt% W‐ doped, and 2 wt% W‐doped VO2 thin films was 1.7, 1.3, and 0 eV, respectively. Four‐point probe resistivity measurements showed a significant decrement, from approximately 1 MΩ at 15°C to <100 Ω at 80°C. Regarding Vis‐NIR spectroscopy results, maximum optical transmission for undoped and W‐doped films was approximately 75% and 35%, respectively.

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n-VO2/p-GaN based nitride–oxide heterostructure with various thickness of VO2 layer grown by MBE

Cited by 21 publications

References 17 publications

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method

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n-VO2/p-GaN based nitride–oxide heterostructure with various thickness of VO2 layer grown by MBE

Cited by 21 publications

References 17 publications

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Structural, morphological, and optical properties of W‐doped VO2 thin films prepared by sol‐gel spin coating method

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Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method