It has been predicted that near-threshold ionization (NTI) in a gaseous dielectric inhibits the development of electron avalanche when the gaseous dielectric has a sufficient capability for low-energy electron attachment. The NTI leaves little energy for the primary and secondary electrons involved in the ionization; thus, both electrons can be captured by dielectric gas molecules without further ionization. A computational estimation indicates that this process can occur in SF 6.KEYWORDS: gaseous dielectric, electron attachment, ionization, threshold, electron avalanche, sulfur hexafluoride It would be a prevailing understanding that ionization in gaseous dielectrics is undesirable for electric insulation. However, there can surprisingly be an ionization process that inhibits the development of electron avalanche. An ionization collision at an electron energy near the ionization threshold can induce more electron attachments than compensates the increase in the number of electrons due to the ionization when the gaseous dielectric has a sufficient capability for low-energy electron attachment. The number of electrons rather decreases indirectly for ionization. Let us call such ionization and attachment processes 'near-threshold ionization' (NTI) and 'ionization-aided attachment' (IAA). SF 6, which is one of the most widely used representative gaseous dielectrics for electric power systems, is an example gas with an electronegativity adequate for the IAA. The IAA mechanism is interesting from the viewpoint of electron swarm dynamics in gas, and it may invoke innovative ideas for future gas insulation. In this paper, we explain the mechanism of the IAA, and point out its presence in the electron processes in SF 6.Let us consider an ionization collision in SF 6 at the energy f' near the ionization threshold fion. The residual energy f res = f' -fion after the ionization collision is shared between the primary (colliding) and secondary (released) electrons. Their energies, f1 and f2, satisfy f1 + f2 = f res and f1 : f2 = e : (I-e) (see Fig. 1). Here, e is the energy division ratio (0 ::; e ::; 1). Because SF 6 has a large attachment cross section at low electron energies less than 1 eV,1-3) it is probable that both of the primary and secondary electrons are captured before further ionizations when f res is sufficiently small. In such a case, the number of free electrons in SF 6 decreases through the NTI and succeeding electron attachments.The attachment capability of SF 6 can be quantified as the ratio P att of electrons undergoing attachment before represents that more than one-half of the electrons released with fini are captured by SF 6 without ionization on average. However, P att = 1/2 is not the critical value that guarantees a decrease in the number of electrons because the ionizations to be induced by the uncaptured electrons afterward are not always the NTIs compensable by the IAA. It is not easy to analytically specify the critical value of P att and the range of f res allowed for the NTI to guarantee a de...