N-type nc-SiOx:H film enables efficient and stable silicon heterojunction solar cells in sodium environment

Yang, Yuhao; Liu, Wenzhu; Zhang, Liping; Huang, Shenglei; Li, Xiaodong; Jiang, Kai; Li, Zhenfei; Yan, Zhu; Lan, Shihu; Wu, Xiaoqiong; Ma, Zeyu; Zhou, Yinuo; Liu, Zhengxin

doi:10.1016/j.matlet.2021.131360

Cited by 15 publications

(17 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In practice, the growth of p-nc-Si:H on i-a-Si:H is a great technical challenge, especially for high e ciency devices, where the high crystallinity should occur within a small thickness to balance out detrimental parasitic absorption and resistive transport. Here, the strategy for highly crystalline p-nc-Si:H involves the fast nucleation at the initial stage, which was implemented by CO 2 plasma pretreatment on ia-Si:H 54,55 , and the selective removal of amorphous fraction by high-ow-rate hydrogen plasma during the growth, leading to the accumulation of dense crystallites into the a-Si:H matrix 22 . As the cost, the pitch time of p-nc-Si:H is prolonged compared to p-a-Si:H due to the back etching of hydrogen plasma on the growing front, which must draw attention for mass production.…”

Section: Characterization Of P-nc-si:hmentioning

confidence: 99%

26.7% efficiency silicon heterojunction solar cells achieved by electrically optimized nanocrystalline-silicon hole contact layers

Lin¹,

Yang²,

Ru³

et al. 2023

Preprint

View full text Add to dashboard Cite

Thanks to the prominent passivating contact structures, silicon heterojunction (SHJ) solar cell has recently achieved revolutionary advancements in the photovoltaic industry. This is, however, bound to further strengthen its contact performance for gaining the competitive edge in the period of technology transformation. Here, we developed SHJ cells with improved rear contact consisting of a p-type doped nanocrystalline silicon and a tailored transparent conductive oxide. Benefiting from the low contact resistance of hole-selective contacts (< 5 mΩ·cm2), a high power conversion efficiency of 26.74% together with a record filling factor (FF) of 86.48% were certified on industrial-grade silicon wafers (274 cm2, M6 size). The electrical properties of the modified SHJ cells were thoroughly analyzed in comparison with the normal p-type transporting layer counterparts (i.e., amorphous silicon), and the improved charge carrier transport in behind were also fully demonstrated.

show abstract

Section: Characterization Of P-nc-si:hmentioning

confidence: 99%

26.7% efficiency silicon heterojunction solar cells achieved by electrically optimized nanocrystalline-silicon hole contact layers

Lin¹,

Yang²,

Ru³

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…The most noteworthy feature that these SHJ solar cells have in common is that they contain n‐type hydrogenated nanocrystalline silicon oxide (nc‐SiO x :H) instead of a‐Si:H(n) layers, which are used for charge carrier collection. Compared with a‐Si:H(n) films, such nc‐SiO x :H films enable a high PCE through the reduction of parasitic absorption due to their superior electrical and favorable optical properties 4,16–18 . However, to further improve the PCE of SHJ solar cells, it is crucial to improve the short‐circuit current density ( J sc ).…”

Section: Introductionmentioning

confidence: 99%

“…Parasitic absorption also occurs in the carrier selective a‐Si:H layers due to the presence of hydrogen related defects and high absorption coefficient 3,12,16–18 . Recently, many reports showed that nc‐SiO x :H has the advantages in improving the J sc due to its low absorption coefficient 1,3,4,12,16–18,42–46 .…”

Section: Introductionmentioning

confidence: 99%

“…Its higher doping efficiency and improved transport properties result from nanometer‐sized hydrogenated nanocrystalline silicon (nc‐Si:H) embedded in hydrogenated amorphous silicon oxide (a‐SiO x :H) matrix 16,17 . Moreover, alloyed with carbon dioxide (CO 2 ), nc‐SiO x :H allows tunable optoelectrical properties such as higher optical band gap ( E g ), 16,17 which makes it more transparent. Typically, radio frequency (RF) excited PECVD and very high frequency (VHF) excited PECVD are common deposition methods used to deposit nc‐SiO x :H 12,16,17 .…”

Section: Introductionmentioning

confidence: 99%

“…Compared with a-Si:H(n) films, such nc-SiO x :H films enable a high PCE through the reduction of parasitic absorption due to their superior electrical and favorable optical properties. 4,[16][17][18] However, to further improve the PCE of SHJ solar cells, it is crucial to improve the short-circuit current density (J sc ). Namely, it is necessary to reduce the optical losses in the doped carrier selective collection layers and TCO films due to parasitic absorption, which reduces the J sc and the resulting PCE.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Achievement of 25.54% power conversion efficiency by optimization of current losses at the front side of silicon heterojunction solar cells

Tang¹,

Yu²,

Peng³

et al. 2022

Progress in Photovoltaics

View full text Add to dashboard Cite

Parasitic absorption in the front window layers of transparent conductive oxide (TCO) films and carrier selective collection layers and the optical shading losses from the metallic finger grid mainly limit the current generation in silicon heterojunction (SHJ) solar cells. In this work, we demonstrate an improved short-circuit current density (J sc ) of 40.24 mA/cm 2 through a combination of novel window layers composed of transition metal doped indium oxide (IMO) and hydrogenated nanocrystalline silicon oxide (nc-SiO x :H) films and Cu plating for SHJ solar cells. By introducing water vapor during direct current (DC) magnetron sputtering deposition process, IMO films show a large optical band gap (E g ) of about 3.88 eV and high mobility up to 83.2 cm 2 /VÁs, while maintaining a low carrier concentration, which leads to high transparency and low near-infrared (NIR) free carrier absorption (FCA). In addition to its high deposition rate and crystalline volume fraction, we found that nc-SiO x :H films deposited by very high frequency (VHF) excited plasma-enhanced chemical vapor deposition (PECVD) show an excellent surface passivation quality, which not only improves the open circuit voltage (V oc ) of SHJ cells but also increases the J sc through improved carrier selective collection. The quantified J sc breakdown analysis was performed to identify the room for improvement, and it showed that the front shading loss (about 1.32 mA/cm 2 ) is the largest portion. By combining the benefits of these window layer enhancements with the further use of fine line width and conductivity of Cu plating, SHJ solar cells, with a J sc improvement of 0.57 mA/cm 2 and a certified efficiency of 25.54%, were achieved on a total area of 274.5 cm 2 using in-house pilot production line equipment.

show abstract

A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices

Qiu,

Lambertz,

Duan

et al. 2024

Advanced Science

View full text Add to dashboard Cite

Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc‐SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc‐SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc‐SiOx:H and hydrogenated amorphous silicon oxide (a‐SiOx:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

show abstract

N-type nc-SiOx:H film enables efficient and stable silicon heterojunction solar cells in sodium environment

Cited by 15 publications

References 15 publications

26.7% efficiency silicon heterojunction solar cells achieved by electrically optimized nanocrystalline-silicon hole contact layers

26.7% efficiency silicon heterojunction solar cells achieved by electrically optimized nanocrystalline-silicon hole contact layers

Achievement of 25.54% power conversion efficiency by optimization of current losses at the front side of silicon heterojunction solar cells

A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices

Contact Info

Product

Resources

About