n-Type Ge–SiGe Quantum Cascade Structure Utilizing Quantum Wells for Electrons in the $L$ and $\Gamma$ Valleys

Genquan, Han; Yu, Jinzhong; Liu, Y.

doi:10.1109/lpt.2008.916946

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Cited by 4 publications

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“…Compared with III-V compounds QC lasers, SiGe materials have some advantages, such as no polar phonon-electron interaction and better thermal properties, which make it attractive for emission in the far-infrared (terahertz) spectral region. Many efforts have been made to explore Si based QC lasers, Electroluminescence at mid and far-infrared wavelengths has been demonstrated with p-type SiGe/Si superlattices [1,2] and n-type structures were also put forward [3][4][5].…”

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Si based quantum cascade structure: from energy band structures design to materials growth

Han

2009

Phys. Status Solidi (c)

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In this paper, we propose an n‐type vertical transition bound‐to‐continuum Ge/SiGe quantum cascade structure utilizing electronic quantum wells in the L and Γ valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. The Γ‐L intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. We also show that high quality Si1–yGey pseudosubstrate is obtained by thermal annealing of Si1–xGex/Ge/Si structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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