n
          -type electrical conduction in transparent thin films of delafossite-type AgInO2

Otabe, Takuya; Ueda, Kazushige; Kudo, Atsushi; Hosono, Hideo; Kawazoe, Hiroshi

doi:10.1063/1.120957

Cited by 78 publications

(47 citation statements)

References 6 publications

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“…In this regard, it is also worthwhile to mention that the M III O 2 layers of this structure is also important for designing n-TCOs, specially for the cations like Ga þ3 , In þ3 in the M III sites with s 0 configuration [70]. Following the above argument, a delafossite AgInO 2 thin film with n-type semiconductivity has already been demonstrated [36].…”

Section: Criteria To Choose P-tcomentioning

confidence: 93%

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Banerjee¹,

Chattopadhyay²

2005

Progress in Crystal Growth and Characterization of Materials

334

166

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Section: Criteria To Choose P-tcomentioning

confidence: 93%

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Banerjee¹,

Chattopadhyay²

2005

Progress in Crystal Growth and Characterization of Materials

334

166

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“…Corresponding Ag-based delafossite materials are difficult to synthesize by simple solid-state reaction [119,126]. The first report of Ag-based delafossite thin film was AgInO 2 , which is n-type in nature [127]. Later, Nagrajan et al [128] reported that Mg-doped AgInO 2 powder (AgIn 1−x Mg x O 2 , x = 0.1), when treated with fluorine or highpressure oxygen, p-type nature was observed with conductivity as low as 10 −6 S cm −1 .…”

Section: P-tco With Delafossite Structurementioning

confidence: 99%

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Banerjee¹,

Chattopadhyay

2008

Reactive Sputter Deposition

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Reactive sputtering is one of the most widely used techniques for preparing compound thin films (such as oxides, nitrides, carbides, etc.) by sputtering metal targets in an active gas atmosphere (Ar + O 2 /N 2 /CH 4 , etc.) [1][2][3][4]. In this chapter, we have discussed, in details, the formation of spinel and delafossite materials of the form AB 2 O 4 and ABO 2 (A and B may be monovalent, divalent, trivalent, or tetravalent cations, depending on the crystal structure, described later) by reactive sputtering technique. Specially, wide bandgap, ptype semiconducting, and transparent oxide materials with delafossite and spinel structure, having interesting applications in "Transparent Electronics," have been discussed in details. In Sects. 12.2-12.5, a detailed review on the structural, optical, and electrical properties of these p-type transparent conducting oxides (p-TCOs), deposited by reactive sputtering technique, has been presented and the origin of p-type conductivity of these materials has been discussed with considerable attention. Most of the results presented in these sections are reported by various authors working on this field. In Sect. 12.6, synthesis and electro-optical characterization of one of the very important delafossite, p-type semiconducting, and wide-bandgap material, such as CuAlO 2 , produced by our group via reactive sputtering technique, have been discussed in details. Detailed discussions on spinel-and delafossitestructured material can be found in various literatures [5][6][7][8][9][10][11][12][13][14]. Also, detailed reviews on the p-TCO materials have been published by us and others [15][16][17], which cover the syntheses and properties of a range of p-TCO materials reported so far.

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“…[15,[33][34][35][36][37][38][39][40]. These have interesting electronic/optoelectronic applications but have yet to break into the TSO industry for high volume production because of their costly and complex fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

2015

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TiO 2 -based thin films and nanomaterials have been fabricated via physical and solution-based techniques by various research groups around the globe. Generally, most applications of TiO 2 involve photocatalytic activity for water and air purification, self-cleaning surfaces, antibacterial activity, and superhydrophilicity. As a widebandgap semiconductor, modified TiO 2 belongs to a class of materials called transparent semiconducting oxides (TSOs), which are simultaneously optically transparent and electrically conductive. TSOs continue to be in high demand for a variety of applications ranging from transparent electronics and sensor devices to light detecting and emitting devices in telecommunications. However, reports on TiO 2 applications as an effective TSO for transparent electronics applications have been limited. In general, TiO 2 is intrinsically an n-type semiconductor but can be doped to have p-type semiconductivity. This provides a very important opportunity to fabricate all-transparent homojunction devices for light harvesting and energy storage. P-type TSOs have recently attracted tremendous interest in the field of active devices for emerging transparent electronics for potential use in ultra-violet light-based solar cells. Therefore, a detailed overview of the synthesis, band structure modification via doping, properties, and applications of modified TiO 2 as n-and p-type TSOs is warranted. This article comprehensively reviews the latest developments. The discussion includes solution-based wet chemical techniques and vacuum-based dry physical techniques fabricating TiO 2 -TSOs. The synthesis of p-TiO 2 in particular is discussed in detail as it may provide interesting breakthroughs in emerging transparent electronics applications. Also, the structural, optical, and electrical properties of TiO 2 are discussed in the context of TSO applications, specifically the defect chemistry of TiO 2 to obtain n-and p-type semiconductivity, which could provide interesting insights into the band structure engineering of TiO 2 for conductivity reversal. Applications of both nand p-type TiO 2 have been reviewed in detail in relation to thin film transparent homo/heterojunction devices, dyesensitized solar cells, electrochromic displays, and other energy-related applications.

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n -type electrical conduction in transparent thin films of delafossite-type AgInO2

Cited by 78 publications

References 6 publications

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

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