N-type compensated silicon: resistivity, crystal growth, carrier lifetime, and relevant application for HIT solar cells

Li, Shuai; Gao, Wenxiu; Li, Zhen; Lin, Jin‐Xia; Cheng, Qijin

doi:10.1088/1361-6463/aa69de

Cited by 3 publications

(2 citation statements)

References 53 publications

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“…Therefore, the MATE transporters facilitating drug/ion coupled transportation via Na+ or H+ coupling (Lu et al, 2013a) have already been described. The functionally diverse ABC family members utilize ATP to export their substrates and some act as ion channel modulators (Li et al, 2017). The structure of the ABC family transporter consists of two domains-one with substrate binding pocket (TMDs) and another with nucleotidebinding domain (NBDs)-which binds and initiates hydrolysis of ATP to stimulate the transport cycle (Dawson and Locher, 2006;Jin et al, 2012;Choudhury et al, 2014;Kodan et al, 2014;Johnson and Chen, 2017;Verhalen et al, 2017).…”

Section: Function and Regulation Mechanism Of E Ux Pumpmentioning

confidence: 99%

The culmination of multidrug-resistant efflux pumps vs. meager antibiotic arsenal era: Urgent need for an improved new generation of EPIs

Chetri¹

2023

Front. Microbiol.

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Efflux pumps function as an advanced defense system against antimicrobials by reducing the concentration of drugs inside the bacteria and extruding the substances outside. Various extraneous substances, including antimicrobials, toxic heavy metals, dyes, and detergents, have been removed by this protective barrier composed of diverse transporter proteins found in between the cell membrane and the periplasm within the bacterial cell. In this review, multiple efflux pump families have been analytically and widely outlined, and their potential applications have been discussed in detail. Additionally, this review also discusses a variety of biological functions of efflux pumps, including their role in the formation of biofilms, quorum sensing, their survivability, and the virulence in bacteria, and the genes/proteins associated with efflux pumps have also been explored for their potential relevance to antimicrobial resistance and antibiotic residue detection. A final discussion centers around efflux pump inhibitors, particularly those derived from plants.

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Section: Function and Regulation Mechanism Of E Ux Pumpmentioning

confidence: 99%

The culmination of multidrug-resistant efflux pumps vs. meager antibiotic arsenal era: Urgent need for an improved new generation of EPIs

Chetri¹

2023

Front. Microbiol.

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“…N‐type silicon has been proven to be an alternative material featuring larger tolerance of most metal impurities for industrial solar‐grade (SOG) silicon. In addition, compared with p‐type silicon, n‐type silicon is reported to have less light induced degradation caused by boron‐oxygen complexes .…”

Section: Introductionmentioning

confidence: 99%

Fabrication and temperature‐dependent performance of aluminum‐alloyed back‐junction n‐type silicon solar cells

Lin

et al. 2017

Progress in Photovoltaics

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Aluminum-alloyed back-junction is a novel concept for low-cost and industrially feasible n-type silicon solar cells. In this paper, we fabricated industrially high-efficiency solar cells based on both uncompensated and compensated n-type silicon. Moreover, we measured the impact of temperature on the photovoltaic performance of aluminum-alloyed back-junction n-type silicon solar cells. Compared with conventional front-junction solar cells, the back-junction silicon solar cells have a lower absolute temperature coefficient especially for moderate carrier diffusion lengths which is attributed to distinctive spectral response, stronger dependence on carrier diffusion lengths, and incomplete ionization of aluminum. In addition, the lowest absolute temperature coefficient is obtained on this type of aluminum-alloyed back-junction solar cell when the compensated silicon is used as the base layer. These results suggest that aluminumalloyed back-junction solar cells especially based on the compensated silicon can generate more electricity at a high temperature, and therefore, as a cost-effective production of silicon solar cells, this type of solar cells have a very good potential for actual outdoor application. This work is highly relevant to the development of an advanced process for the achievement of low-cost, high-efficiency, commercially viable silicon-based solar cells.

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Investigating the effects of impurity on electron mobility in quasi-one-dimensional wires

Bahrami,

Kiamehr,

Sharafi

et al. 2023

Mod. Phys. Lett. B

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In this research, the electron mobility in GaAs quasi-one-dimensional wires with the presence of ionized impurity at zero temperatures was investigated and the results were compared with the mobility of a two-dimensional electron gas system. GaAs is a non-magnetic semiconductor with a direct band gap. Here for the calculations, the Boltzmann transport equation is used in the relaxation time approximation, taking into account the ionized impurity potential. Focusing on ionized Coulomb scattering and the short-range disorder is our goal. Electron mobility was investigated based on related parameters (Fermi energy and width of nanowires), and its diagram was drawn. In the end, the results of this research were compared with electron mobility in completely two-dimensional electronic systems. As expected, the numerical results showed that the electron mobility in extensive wires converges to the electron gas mobility of a fully two-dimensional plane.

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N-type compensated silicon: resistivity, crystal growth, carrier lifetime, and relevant application for HIT solar cells

Cited by 3 publications

References 53 publications

The culmination of multidrug-resistant efflux pumps vs. meager antibiotic arsenal era: Urgent need for an improved new generation of EPIs

The culmination of multidrug-resistant efflux pumps vs. meager antibiotic arsenal era: Urgent need for an improved new generation of EPIs

Fabrication and temperature‐dependent performance of aluminum‐alloyed back‐junction n‐type silicon solar cells

Investigating the effects of impurity on electron mobility in quasi-one-dimensional wires

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