N-type bifacial cell using simplified ion doping system

Nakamura, Kyotaro; Takeda, Norihiko; Soga, T.; Murakami, Yoshinobu; Ohshita, Yoshio

doi:10.1109/pvsc.2014.6924899

Cited by 2 publications

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“…While using this equipment, the annealing after the ion shower is required for recrystallization of the damage layer. 7) On the other hand, thermal solid phase boron diffusion from boron silicate glass (BSG) deposited by atmospheric-pressure chemical vapor deposition (AP-CVD) is well matured and cost effective method to form the p+ boron diffusion layer. The AP-CVD is simple without requirement of any vacuum system and high through-put.…”

Section: Introductionmentioning

confidence: 99%

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Kurachi¹,

Yoshioka

2015

Jpn. J. Appl. Phys.

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An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

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Section: Introductionmentioning

confidence: 99%

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Kurachi¹,

Yoshioka

2015

Jpn. J. Appl. Phys.

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“…without mass selection), and thermally activated, seem to reach sufficient emitter quality (implied V oc of 670 mV), with alumina passivation and an additional forming gas anneal, but information on the actual ion specie implanted is not given and no complete cells were made. Nakamura et al made passivated emitter rear totally diffused (bifacial) solar cells with an ion shower tool and reported efficiencies around 18.5%, limited by recombination losses in the boron emitter. As B 2 H 6 is a more toxic, expensive, and unstable gas than BF 3 , we will focus on the latter gas in this paper.…”

Section: Introduction: Boron Doping By Blii and Piiimentioning

confidence: 99%

Solar‐grade boron emitters by BF₃ plasma doping and role of the co‐implanted fluorine

Lanterne

Perchec

Coig

et al. 2015

Progress in Photovoltaics

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We investigate the electrical properties and dopant profiles of boron emitters performed by plasma immersion ion implantation from boron trifluoride (BF 3 ) gas precursor, thermally annealed and passivated by silicon oxide/silicon nitride stacks. High thermal budgets are required for doses compatible with screen-printed metal pastes, to reach very good activation rates. However, if good sheet resistances and saturation current densities may be obtained, we met strong limitations of the implied open-circuit voltage of the n-type Czochralski silicon substrates, which is incompatible with high-efficiency solar cells. Such limitations are not encountered with beamline where pure B + ions are implanted. Efforts on the passivation quality may improve the implied open-circuit voltage but are not sufficient. We provide experimental comparison between beamline and plasma immersion allowing us to discriminate the causes explaining this observation (implantation technique or ion specie used) and to infer our interpretation: The co-implantation of fluorine seems to indirectly impact the lifetime of the core substrate after thermal annealing.

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N-type bifacial cell using simplified ion doping system

Cited by 2 publications

References 4 publications

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Solar‐grade boron emitters by BF₃ plasma doping and role of the co‐implanted fluorine

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N-type bifacial cell using simplified ion doping system

Cited by 2 publications

References 4 publications

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Solar‐grade boron emitters by BF3 plasma doping and role of the co‐implanted fluorine

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Solar‐grade boron emitters by BF₃ plasma doping and role of the co‐implanted fluorine