N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Jhu, Jhe Ciou; Chang, Ting Chang; Chang, Gau-Banng; Tsai, Tsung-Heng; Syu, Yong En; Jian, Fu Yen; Chang, Ku‐Chou; Tai, Ya‐Hsiang

doi:10.1149/04531.0047ecst

Cited by 2 publications

(2 citation statements)

References 21 publications

(21 reference statements)

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“…Therefore, the crystallization produces not only a positive effect for the control of threshold voltage, but also a negative effect to decrease the field-effect mobility. For the adjustment of V th , O 3 annealing 16) or N 2 O plasma treatment 17) has already been reported to be effective without crystallization. For these reasons, the crystallization seems to be unnecessary for improving the disadvantage for TFT device performance.…”

Section: Thin-film Transistor Performancementioning

confidence: 99%

Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance

Suko¹,

Jia²,

Nakamura³

et al. 2016

Jpn. J. Appl. Phys.

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Amorphous indium–gallium–zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300–1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700–1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current–gate voltage (I d–V g) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (V th) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in V th, whereas the field-effect mobility decreased considerably.

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Section: Thin-film Transistor Performancementioning

confidence: 99%

Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance

Suko¹,

Jia²,

Nakamura³

et al. 2016

Jpn. J. Appl. Phys.

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“…Most focused on various gate insulator/passivation materials [2]- [7], hydrogen and nitrogen treatments [8], [9] of the a-IGZO back surface, and also time and/or temperaturedependent postfabrication anneals in vacuum, hydrogen, nitrogen, and ambient oxygen [7], [10]- [13].…”

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confidence: 99%

Effect of SiO2 and SiO2/SiN<italic>x</italic> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Chowdhury

Mativenga

et al. 2015

IEEE Trans. Electron Devices

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We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO 2 ) and bilayer (SiO 2 /SiN x ) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts ( V ON ), the size of which increased with storing time. The negative V ON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO 2 passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO 2 passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO 2 interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).Index Terms-Amorphous-indium-gallium zinc oxide (a-IGZO), oxide thin-film transistors (TFT) reliability, SiO 2 and SiN x passivation layer, TFT.

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N₂O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Cited by 2 publications

References 21 publications

Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance

Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance

Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

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