N
          -side illuminated microcrystalline silicon solar cells

Gross, Armin; Vetterl, O.; Lambertz, Andreas; Finger, F.; Wagner, H.; Dasgupta, Arup

doi:10.1063/1.1395518

Cited by 20 publications

(14 citation statements)

References 6 publications

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“…This is consistent with a report that the electric field is mainly localized at the I/P interface in high-performing lc-Si:H solar cells. 12,28,29 Meanwhile, the weak bulk field of the S1 sample can be enhanced by the insertion of an a-Si:H buffer layer at the I/P interface. In addition to the simulation results, this field reinforcement is also supported by our experimental results.…”

Section: Samplesmentioning

confidence: 99%

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Bai

Liu

Zhao

et al. 2015

Journal of Applied Physics

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A simulation and experimental study on the effect of the buffer layer at the I/P interface on the performance of NIP-type hydrogenated microcrystalline silicon (lc-Si:H) single-junction solar cells is presented. Device-quality hydrogenated amorphous silicon (a-Si:H) material as a buffer layer at the I/P interface obviously improves the performance of NIP-type lc-Si:H single-junction solar cells. In addition to the well-known mechanism that an a-Si:H I/P buffer layer can reduce the recombination current density at I/P interfaces, the optically and electrically calibrated simulations and supporting experimental results in this study illustrate that the performance improvement also originates from the mitigation of the electric screening effect due to the reduced defect density at the I/P interfaces, which reinforces the bulk electric field. Integrating an optimized hydrogen profiling strategy and adding a-Si:H I/P buffer layer yielded an initial efficiency of 9.20% for lc-Si:H single-junction solar cells with an active area of 0.27 cm 2 . This study may provide new ideas of further improving the performance of NIP-type lc-Si:H single-junction solar cells by mitigating the electric screening effect. V C 2015 AIP Publishing LLC.

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Section: Samplesmentioning

confidence: 99%

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Bai

Liu

Zhao

et al. 2015

Journal of Applied Physics

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“…Nanocrystalline Silicon Carbide (nc-3C-SiC) is an excellent alternative material for transparent and conducting window layer in the n-i-p thin film solar cells due to its high optical transparency and high conductivity [3][4][5]. This type of solar cell is illuminated through n-side and has a similar performance compared to p-i-n configuration solar cell [3][4][5][6]. However, the growth of nc-SiC at low substrate temperature (T S ), e.g.,< 400 o C is a major challenge for the application in thin film solar cells as this type of cells are prepared on cheap glass substrates or flexible substrates.…”

Section: Introductionmentioning

confidence: 95%

Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD

Jha

Singh

Yadav

et al. 2012

16th International Workshop on Physics of Semiconductor Devices

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Nanocrystalline cubic silicon carbide (nc-3C-SiC) films are deposited using hot wire chemical vapour deposition technique at ~350 o C on glass substrates using SiH 4 /CH 4 /H 2 as precursor gases. We investigated the influence of total gas pressure on the structural, optical and transport properties of nc-3C-SiC films. Raman scattering spectra and X-ray diffraction patterns revealed that the film prepared below 2 mbar is nanocrustalline silicon (nc-Si), while at ≥ 2 mbar films are nc-3C-SiC. We achieved high deposition rate (≥ 14-20 nm/min), high optical band gap (3.2-3.4 eV) and high conductivity (~ 10 -4 -10 -2 Ω -1 cm -1 ) suitable for window layer for Solar cells.Silicon Carbide, HWCVD and solar cell

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“…In contrast, solar cells utilising microcrystalline silicon (c-Si:H) absorber layers may be illuminated from either p-or n-side [2], without significant impact of the illumination side on the cell performance. This is because the hole drift mobility and mobilitylifetime product in c-Si:H films are much higher than those in a-Si:H films [3].…”

Section: Introductionmentioning

confidence: 95%

Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiO_x:H doped layers

2014

Self Cite

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We present the development and application of n-type hydrogenated microcrystalline silicon oxide (c-SiO x :H) in semitransparent bifacial microcrystalline silicon (c-Si:H) solar cells. Semitransparent bifacial solar cells are of interest for a number of technical applications like building integration or concentrator devices, but also can offer new insight into solar cell properties due to the possibility to illuminate the cell from both sides. Appropriately selected c-SiO x :H n-layers with low refractive index and high optical band gap allow the reduction of the reflection of the cells and improve short circuit current density (J SC ) and conversion efficiencies. The quality of n-type c-SiO x :H window layers is demonstrated in solar cells with highly reflective ZnO/Ag contacts. High J SC values of 24.8 mA/cm 2 and efficiencies of 9.5% are obtained for 1 m thick solar cells.

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N -side illuminated microcrystalline silicon solar cells

Cited by 20 publications

References 6 publications

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD

Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiO_x:H doped layers

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N -side illuminated microcrystalline silicon solar cells

Cited by 20 publications

References 6 publications

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD

Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiOx:H doped layers

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Product

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Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiO_x:H doped layers