n-Si/p-Sb2Se3 structure based simple solar cell device

Mamta, .; Singh, Yogesh; Maurya, K. K.; Singh, V. N.

doi:10.1016/j.mtsust.2022.100148

Cited by 9 publications

(7 citation statements)

References 29 publications

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“…The bandgap of the Sb 2 Se 3 film in this article was measured to be 1.65 eV, congruent with the literature-reported value. [30,31] The band alignment of the Sb 2 Se 3 /CdTe interface, including the determination of the valence band offset (ΔE V ), can be characterized by XPS measurements at a heterojunction interface. [35] The following formula was used to calculate the value of ΔE V at Sb 2 Se 3 /CdTe interface.…”

Section: Resultsmentioning

confidence: 99%

“…The bandgap of the Sb 2 Se 3 film in this article was measured to be 1.65 eV, congruent with the literature‐reported value. [ 30,31 ]…”

Section: Resultsmentioning

confidence: 99%

“…[28] The bandgap of Sb 2 Se 3 ranges from 1.1 to 1.9 eV, as supported by other studies. [28][29][30][31] Moreover, considering cost and environmental compatibility, Sb and Se are both abundant and nontoxic elements, which make Sb 2 Se 3 promising for large-scale commercial photovoltaic applications. [32] The p-type Sb 2 Se 3 material has good charge transport capacity since its carrier mobility is %10 cm 2 V À1 S À1 .…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Performance of CdTe Solar Cells with Sb₂Se₃ Back Contacts

Liu

Wang

Huang

et al. 2023

Physica Status Solidi (a)

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The barrier at CdTe/metal interface severely limits the efficiency of CdTe photovoltaic devices. In this study, the effectiveness of a thermally evaporated Sb2Se3 buffer layer as a back contact in CdTe solar cells is investigated, revealing a significant enhancement in device performance. Through optimization of the Sb2Se3 thickness, a remarkable increase in the open‐circuit voltage (VOC) to 804 mV is achieved, leading to a substantial efficiency improvement of 12.84% when compared to the Au‐only back contact device. X‐ray photoelectron spectroscopy (XPS) reveals a well‐matched energy band alignment at CdTe/Sb2Se3 interface, confirming favorable conditions for hole transport. To further enhance the device performance, Cu doping is implemented in the Sb2Se3 film, resulting in additional improvements to the VOC and FF of the Cu‐doped configuration to 819 mV and 72.35%, respectively, while also enhancing the overall efficiency to 14.3%.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

“…The bandgap of the Sb 2 Se 3 film in this article was measured to be 1.65 eV, congruent with the literature‐reported value. [ 30,31 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhanced Performance of CdTe Solar Cells with Sb₂Se₃ Back Contacts

Liu

Wang

Huang

et al. 2023

Physica Status Solidi (a)

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“…This work’s data agree with those from earlier investigations into Sb 2 Se 3 thin films, which were performed using different techniques [ 29 ]. In earlier reports, the thin film’s absorption coefficient ‘α’ was determined to be a function of wavelength variation in bandgap resulting from various deposition techniques and synthesis conditions [ 30 ]. Raman spectroscopy, a quick and, ideally, non-destructive method, can be used to characterize Sb 2 Se 3 , CdS and their impurity phases.…”

Section: Experimental Study Of the Proposed Device Structurementioning

confidence: 99%

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

et al. 2023

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As a promising solar absorber material, antimony selenide (Sb2Se3) has gained popularity. However, a lack of knowledge regarding material and device physics has slowed the rapid growth of Sb2Se3-based devices. This study compares the experimental and computational analysis of the photovoltaic performance of Sb2Se3-/CdS-based solar cells. We construct a specific device that may be produced in any lab using the thermal evaporation technique. Experimentally, efficiency is improved from 0.96% to 1.36% by varying the absorber’s thickness. Experimental information on Sb2Se3, such as the band gap and thickness, is used in the simulation to check the performance of the device after the optimization of various other parameters, including the series and shunt resistance, and a theoretical maximum efficiency of 4.42% is achieved. Further, the device’s efficiency is improved to 11.27% by optimizing the various parameters of the active layer. It thus is demonstrated that the band gap and thickness of active layers strongly affect the overall performance of a photovoltaic device.

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“…Antimony selenide (Sb 2 Se 3 ) possesses a wide adjustable bandgap spanning the range 1.12 eV-1.98 eV, [14,15] allowing for the formation of type-I and type-II heterojunctions with Si. Sb 2 Se 3 is nontoxic and inexpensive, [16] and exhibits excellent physical properties such as intrinsic p-type conductivity, [17] a high absorption coefficient (∼ 10 5 cm −1 ), [18] an excellent carrier density (∼ 10 15 cm −3 ) [19] and fast electron trapping.…”

Section: Introductionmentioning

confidence: 99%

Interfacial photoconductivity effect of type-I and type-II Sb₂Se₃/Si heterojunctions for THz wave modulation

Cao 曹,

Huang 黄,

Xi 席

et al. 2023

Chinese Phys. B

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In-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, the extraction of the photoconductivity and photocarrier density at the heterojunction interface still remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of the 173 nm-Sb2Se3/Si (type-Ⅰ heterojunction) and 90 nm-Sb2Se3/Si (type-Ⅱ heterojunction) utilizing the terahertz (THz) time-domain spectroscopy (THz-TDS) and theoretical Drude model. Since type-Ⅰ heterojunction accelerates carrier recombination and type-Ⅱ heterojunction accelerates carrier separation, the photoconductivity and photocarrier density of type-Ⅱ heterojunction (21.8×104 S/m, 1.5×1015 cm-3) are higher than that of type-Ⅰ heterojunction (11.8×104 S/m, 0.8×1015 cm-3). These results demonstrate that the type-Ⅱ heterojunction is superior to type-Ⅰ heterojunction for THz wave modulation. This work highlights the THz-TDS as an effective tool to study the photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.

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n-Si/p-Sb2Se3 structure based simple solar cell device

Cited by 9 publications

References 29 publications

Enhanced Performance of CdTe Solar Cells with Sb₂Se₃ Back Contacts

Enhanced Performance of CdTe Solar Cells with Sb₂Se₃ Back Contacts

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

Interfacial photoconductivity effect of type-I and type-II Sb₂Se₃/Si heterojunctions for THz wave modulation

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n-Si/p-Sb2Se3 structure based simple solar cell device

Cited by 9 publications

References 29 publications

Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts

Enhanced Performance of CdTe Solar Cells with Sb2Se3 Back Contacts

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

Interfacial photoconductivity effect of type-I and type-II Sb2Se3/Si heterojunctions for THz wave modulation

Contact Info

Product

Resources

About

Enhanced Performance of CdTe Solar Cells with Sb₂Se₃ Back Contacts

Enhanced Performance of CdTe Solar Cells with Sb₂Se₃ Back Contacts

Interfacial photoconductivity effect of type-I and type-II Sb₂Se₃/Si heterojunctions for THz wave modulation